GaN.Media

Nuvotronics is excited to introduce the PSP1029439, a cutting-edge air-cavity package optimized specifically for Qorvo’s TGA2962 2-20 GHz, 10W GaN amplifier. Designed for ease of integration, this package provides SMT compatibility while maintaining the high performance of the TGA2962 die. ? The PSP1029439 outperforms comparable packages by offering superior thermal management. Efficient heat removal from the die via the top and sides of the package—eliminates the need for a thermal path through the PCB while enhancing heat dissipation. With compact dimensions of 5.5 x 6 x 1.45mm, it includes a matched metal lid and space to incorporate 820 pF wire-bonded capacitors for added stability. ? To access more information: https://lnkd.in/eMxykQGG #Nuvotronics #Polystrata #AdvancedPackaging #mmWave

?? Meet Dr. Rui Ma, mmWave PA Systems Director at pSemi/Murata, and a leader in RF innovation! From pioneering GaN HEMT development at MIT to driving 5G advancements at pSemi, his journey is all about solving complex challenges and inspiring innovation. Catch him at #IMS2025 sharing insights on the future of connected tech and 6G. ?? #RFInnovation #TechLeadership https://buff.ly/3UKtVhV

Trying to fill two Ph.D. positions in circuit design: One in "Adaptive GaN transmitter frontend for increased back-off efficiency" and one in "Advanced receiver topology and circuit design"

Today’s featured paper in our October issue presents A > 120-GHz Bandwidth, >20-dBm Pout, <6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology. ????????????: Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology with 120-GHz Bandwidth, >20-dBm Pout and <6-dB Noise-Figure ????????????????: 2-129 GHz ??????????????: ??Bias condition, primarily the drain current, optimizes the tradeoff between NF, AIP3, Gt and Psat.? ??Total gate width (TGW) choice optimizes the tradeoff between achievable gain and bandwidth.? ??Resistive gate and drain-line terminations optimize reflections at the end of the gate and drain ATLs. ??????????????????????: ??2 – 129 GHz 3 dB bandwidth ??17.9 – 20.2 dBm Pout 1-dB compression from 2–110 GHz, 20.6 – 22.8 dBm Pout Saturated ??6.7 dB average forward gain, 3.1 – 5.7 dB noise figure (2–110 GHz) ??26.8 – 19.8 dBm output-referred 3rd order intermodulation point (OIP3) ??????????????????????: Wireless communications and measurement equipment. ???????? ???????? ????????: https://lnkd.in/dmmQ77Ea #ieee #ieeetmtt #ieeemtt #mtt #tmtt #featuredpaper #microwaves #RF

We’re thrilled to announce that Akash Systems has just been awarded funding from the CHIPS and Science Act, a major milestone that supports our mission to lead the way in AI and space technology manufacturing. This funding empowers us to scale up the delivery of our Diamond Cooled Servers, designed for the high demands of AI and data centers. With much faster Compute performance and enhanced cooling efficiency than ever before, these servers are setting new benchmarks in high-performance computing. We’re also pushing the boundaries of Satellite Communications with our GaN-on-Diamond Space Radios, delivering faster data rates and increased reliability to support global connectivity. A huge congratulations to the team for this historic accomplishment. We are excited for what comes next! https://lnkd.in/grmgVWjN

MACOM expands its IC design expertise with the acquisition of ENGIN-IC, a designer of advanced GaN MMICs and integrated microwave assemblies. Read more: https://ow.ly/Qztz50U1eXV #enginic #gan #mmic #rf #microwave

Infineon continues to push the boundaries of performance and design flexibility with the introduction of its new generation of CoolGaN power discretes which deliver higher efficiency and power density. These new compact devices yield exceptional efficiency in both soft- and hard-switching applications. As a result, power loss is substantially reduced in comparison to conventional silicon technology, with a range of 20 to 60 percent. #infineon #power https://lnkd.in/eUAYwnt5 https://lnkd.in/emNgJ2Jd

MACOM Secures $3.4 Million Defense Contract to Drive GaN-on-SiC Semiconductor Innovations Read more: https://ow.ly/jhsY50U0f7R #defense #galliumnitride #silicon #innovation #semiconductors

MACOM has been selected to lead a development project in advanced GaN-on-SiC semiconductor technology. This initiative, funded by the CHIPS and Science Act through the U.S. Department of Defense, aims to revolutionize RF and microwave applications with cutting-edge GaN-based materials and MMICs. Read more: https://ow.ly/SIN050TZisT

I have a Program Manager position open at our Research Triangle Park location. This position manages product development projects for GaN on SiC Power RF semiconductor components for Aerospace and Defense applications. Requires US citizenship or green card. It is an on-site position.