Vishay Announces Factory Reorganization, Micron NAND Flash Revenue Hits New Highs

1.Vishay Announces Reorganization Plan, Closing Three Manufacturing Facilities and Laying Off Employees

Vishay Intertechnology (Vishay), a U.S. manufacturer of discrete semiconductors and passive components, has announced a restructuring plan that includes the closure of three manufacturing plants and layoffs of about 800 employees, according to Fast Technology News. According to Vishay's official statement, the plants being closed include a diode packaging plant in Shanghai, China, and two resistor plants in Fichtelberg, Germany, and Milwaukee, Wisconsin, USA.

The closure of these plants is expected to be completed by the end of 2026, with production shifts beginning in the fourth quarter of 2025.Vishay expects the restructuring to result in a pre-tax cash charge of $38 million to $42 million, primarily due to severance costs, the majority of which will be incurred in the third quarter of 2024.Vishay expects that when the plan is fully implemented, annual cost savings will be at least 23 million in immediate savings of approximately $9 million and an additional $12 million beginning in the first quarter of 2025.

2. Micron 2024 fiscal year revenue of $ 25.111 billion, a substantial increase of more than 60 percent

Memory original Micron latest announced fiscal 2024 fourth quarter (ended August 29) and full fiscal year financial results.

The fourth fiscal quarter in accordance with GAAP, Micron revenue of $ 7.75 billion, last fiscal quarter of $ 6.81 billion, the same period last year for $ 4.01 billion; gross margin of 35.3%, the last quarter of 26.9%, the same period last year, a loss. Net income of $887 million, compared to $332 million in the previous quarter and a loss of $1.43 billion in the year-ago quarter.

For the full fiscal year on a GAAP basis, Micron's revenue was $25.11 billion, compared to $15.54 billion in the previous fiscal year; gross margin was 22.4 %, compared to a negative loss in the previous fiscal year; and net income was $778 million, compared to a net loss of $5.833 billion in the previous fiscal year.

3. Mega Innovations Announces New Generation of Automotive-Grade MCUs with GD32A7 Series

Mega Innovations announced on the 25th that it has relaunched a new generation of automotive-grade MCUs, the GD32A7 series. Compared with the previous generation of products adopting Arm Cortex-M4/M33, the GD32A7 series is equipped with ultra-high performance Arm Cortex-M7 cores, providing a variety of models for users to choose from, such as GD32A71x/GD32A72x/GD32A74x.

The GD32A71x/GD32A72x/GD32A74x series of automotive-grade MCUs support single-core, dual-core, and single-core lock-step options, respectively, with a main frequency of 160MHz, an arithmetic power of up to 763 DMIPS, and are equipped with up to 4MB of on-chip Flash and 512KB of SRAM, and support for dual Flash BANKs, which can meet the demand for seamless OTA upgrades. The chip adopts 2.97-5.5V wide voltage power supply, can operate stably in the operating temperature range of -40℃~+125℃, meets the AEC-Q100 Grade1 standard, and has an operating life of more than 15 years, which builds up a firm hardware foundation for the safe and stable operation of the system.

In order to meet the needs of diversified body, interconnection and chassis applications, this series of products integrates a wealth of peripheral interfaces, including 6-channel SENT interfaces; 8-channel CAN FD, 12-channel LIN multi-channel high-speed automotive bus interfaces; as well as support for AVB and TSN 1x10/100Mbps Ethernet interfaces; in addition, it also provides 8 SPI, 1 Quad SPI, 2 I2C interfaces. In addition, 8 SPI, 1 Quad SPI, 2 I2C interfaces are also available.

4.SIRIUS launched 17-channel high-precision battery management products TPB76016

Sirep 3PEAK recently launched a new 17-channel high-precision battery management products TPB76016, built-in high-precision reference, operating temperature support -40 ° C to +125 ° C, can be widely used in power batteries, energy storage batteries, as well as other consumer batteries, BMS control board.

TPB76016 has integrated voltage, current, temperature, including a number of protection functions, support the use of internal temperature sensors and up to four external thermistors for temperature detection, integrated programmable memory for use, integrated secondary chemical fuse drive protection, built-in equalization MOS, while supporting external equalization tubes equalization, as well as 1Mbps SPI communication interface and other features.

5.SK Hynix first mass production of 12-layer stacked HBM3E

SK Hynix announced on the 26th, the world's first to start mass production of 12-layer HBM3E, realizing the largest 2 of the existing HBM1 products 36GB capacity. The company will provide customers with this product within the year, showing its overwhelming technological prowess again only six months after being the first in the world to supply 8-layer HBM3E to customers in March this year.

The company has also stacked 12 3GB DRAM chips to achieve the same thickness as its existing 8-layer product while increasing capacity by 50%. To do this, the company manufactured individual DRAM chips 40 percent thinner than before and vertically stacked them using Technology for Silicon Via (TSV) technology.

SK Hynix has also solved the structural problems that arise when stacking thinner chips more. The company applied its core technology, the advanced MR-MUF5 process, to this product, which improves exothermic performance by 10 percent over the previous generation and enhances control of warpage issues, thus ensuring stability and reliability.

6. Infineon expands OptiMOS 6 MOSFET portfolio

Infineon has extended its OptiMOS 6 MOSFET portfolio with new 135 V and 150 V product families. These devices are designed to meet the requirements of driver and switched mode power supply (SMPS) applications and complement the recently released OptiMOS 6 120 V MOSFETs.

Compared to the previous generation (OptiMOS 5 150 V MOSFETs), the new series offers a 50 percent lower on-resistance R DS(on) and a 20 percent lower FOM g. The new series is designed to meet the requirements of drivers and switched-mode power supply (SMPS) applications and complements the recently released OptiMOS 6 120 V MOSFETs. With extremely low R DS(on), improved switching performance and excellent EMI performance, both new families offer unrivaled efficiency, power density and reliability. Faster, softer body diodes reduce Q rr by up to 59%, reducing overshoot and ringing.

The OptiMOS 6 135 V and 150 V MOSFETs are available in a variety of packages including TO-220, D 2PAK 3-pin, D 2PAK 7-pin, TOLL, TOLG, TOLT, SuperSO8 5x6 and PQFN 3.3x3.3.

7.ST Announces Fourth Generation SiC MOSFET Technology Platform for EV Traction Inverters

STMicroelectronics (ST) has announced that it is launching its fourth generation Silicon Carbide (SiC) MOSFET technology. The fourth generation technology brings new benchmarks in terms of energy efficiency, power density and robustness. While meeting the needs of the automotive and industrial markets, the new technology is specifically optimized for traction inverters, a key component of electric vehicle powertrains. As part of its commitment to innovation, ST plans to introduce even more advanced SiC technology innovations by 2027.

ST has completed qualification of its fourth-generation SiC technology platform for the 750V class and expects to complete qualification for the 1200V class in the first quarter of 2025. Devices with nominal voltage ratings of 750V and 1200V will be commercially available, enabling designers to address applications ranging from standard AC line voltage to high-voltage electric vehicle batteries and chargers.

8. Creative Electronics 3nm HBM3E Memory Controller with PHY IP Gains Application

According to IT Home News, Creative Electronics GUC announced that its 3nm process HBM3E memory controller with PHY IP has been adopted by the industry's key CSP cloud service providers and a number of HPC solution providers, the ASIC is expected to be flowed this year, supporting 9.2Gbps HBM3E memory. Creative Electronics is one of the key ASIC design service vendors, with TSMC as its largest shareholder (35% stake) and sole foundry.

Creative Electronics' HBM3E IP has been validated in TSMC's N7/N6, N5/N4P, and N3E/N3P processes, is compatible with all major HBM3 vendors' products, and has been validated for wafering in both CoWoS-S and CoWoS-R packages. In addition to HBM3E, Creative Electronics is also actively working with Micron and other HBM memory vendors to develop HBM4 IP for next-generation AI ASICs.