Thermal Oxidation Process: An Essential Phase in the Production of Semiconductors

A layer of silicon dioxide (SiO2) is grown on the surface of a silicon wafer via thermal oxidation, a basic technique in semiconductor manufacture. This procedure is essential to the production of integrated circuits, transistors, and diodes, among other electronic devices. The concepts, procedures, and importance of thermal oxidation will be discussed in this blog, along with illustrations to help with comprehension.

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How does thermal oxidation work? A silicon wafer is exposed to an oxygen-rich environment at high temperatures (often between 800°C and 1200°C) in order to undergo thermal oxidation. A layer of silicon dioxide is created when the oxygen combines with the silicon surface. There are several uses for this SiO2 layer, including: Electrical isolation keeps components from interfering with one another electrically. Passivation: Prevents contamination and harm to the silicon surface. In MOSFET transistors, gate oxide formation serves as an insulating layer.

Thermal Oxidation Types Depending on the oxidizing agent employed, thermal oxidation can be divided into two primary types:

Dry Oxidation: Uses gaseous pure oxygen (O2). Creates a superior, thinner oxide layer. Frequently utilized in gate oxides and other applications needing exact control.

Wet Oxidation: Uses water vapor (H2O) as the oxidizing agent in this process. Causes the oxide layer to thicken. Ideal for uses such as isolation layers and field oxides.

?Conclusion In the production of semiconductors, thermal oxidation is essential because it makes it possible to produce reliable, high-performing electronic components. Engineers and researchers can keep innovating in the field of microelectronics by comprehending its principles and applications. Please feel free to share this blog if you thought it was interesting, and let's connect to talk more about semiconductor technologies!