Study of Electrical Stress On p-GaN HEMT Through Automated Dynamic Switching Tests
Gallium Nitride (GaN) based power semiconductors have many advantages in power conversion. They are seeing increased use in many applications such as power adapters for mobile devices and power supplies for data centers. The lateral High Electron Mobility Transistor (HEMT) is the most widely used GaN device. The degradation mechanisms of this device have been extensively studied and adopted into reliability testing standards.