Silicon substrate for Neutron Reflectometry experiments

For Neutron Reflectometry we normally offer wafers that are either p-type Boron doped Silicon of crystallographic orientation (100) {Si:B[100]} or n-type Phosphorus doped Silicon {Si:P[100]} at purity level corresponding to Ro>1 Ohmcm. The important characteristic is that such wafers be flats, that is with Total Thickness Variation (TTV) <10μm. Normally, such wafers are thick, often 3mm thick, and one-side-polished.

You certainly need Double-Side-Polished wafers for otherwise, the unpolished side will diffuse whatever radiation you use in your microscopy. Wafers 100μm thick are very thin and therefore expensive, especially in larger diameters. In the visible range (0.3 to 1.0)μm Silicon is opaque. In the near IR range (1.2-5.0)μm, Silicon, both CZ and FZ, has very low absorption, for all resistivities > p-type 20 Ohmcm or > n-type 10 Ohmcm {of course Silicon has a high Refractive Index so transmission in air is limiter to about 50%}. In the IR range (5-10)μm in which Silicon exhibits absorption bands due to Oxygen and to Carbon, FZ crystallized Silicon is better than the more commonly used CZ crystallized Silicon.

Below is just one example of an item we sell for the above experiements.

P/P 2"?×100±15μm FZ n-type FZ Si:P[100], Ro>10 Ohmcm, TTV<10μm.

Please let us know  if you have any questions or need a quote.

Thanks

Chris
[email protected]