SiC Production Facility, Radiation Hardened Power Devices and more
Maurizio Di Paolo Emilio
Content Editor & Technical Writer | Ph.D in Physics | Power Electronics, Wide Bandgap, Renewable Energy, Embedded Systems, Quantum Computing
onsemi had a ribbon-cutting event to commemorate the opening of its silicon carbide factory in Hudson, New Hampshire. Multiple guests of honor, led by U.S. Secretary of Commerce Gina Raimondo, attest to the significance of this event and the semiconductor manufacturing industry in the United States. Also in attendance were Sens. Jeanne Shaheen and Maggie Hassan, Reps. Chris Pappas (NH-01) and Annie Kuster (NH-02), and other local government officials.
The plant will boost its SiC capacity by a factor of 5 year over year, ensuring that onsemi customers have access to vital components. Joe Loiselle, VP of SiC Operations and General Manager onsemi Hudson, NH production sites, analysed the most important aspects of this new facility and the next goals.
“All we produce at the moment is a 150-mm substrate; we also have a 200-mm process and have taken it to device level,” said Loiselle. “The goal at the Hudson site is to expand substrate capacity. We are ramping very aggressively with the goal of reaching the optimum of things by the end of 2022. All our equipment, which we are expanding and investing in, is capable of producing 200 mm. So there will be no need for further investment.”
Radiation Hardened Power Devices: Part 2 WBG Devices and Packaging Options
By Sonu Daryanani
In this Part 2 on radiation hardened power devices, we will look at some of the advantages of WBG semiconductors in this field, specifically SiC MOSFETs and GaN HEMTs. Some packaging options that include lower-cost plastic offerings will also be summarised. [Link Part 1]
Navitas Semiconductor Announces Acquisition of GeneSiC Semiconductor
By Press Release
Navitas Semiconductor, the industry leader in gallium nitride (GaN) power ICs, has announced the acquisition of GeneSiC Semiconductor, a silicon carbide (SiC) pioneer with deep expertise in SiC power device design and process.
Power Electronics Course: Part 4 – Power Components
By Giovanni Di Maria
Let’s continue our exploration of the components used in power electronics, with an overlook at those that are employed as switches in the switching regime while using some SPICE simulations to observe their general behavior.
The switching speed, maximum tolerable voltages and currents, and, most importantly, the reduction of the Rds(on) parameter are just a few examples of how the most recent models have improved.
A Look into Future SiC Power Devices
By Peter Gammon
In this presentation from PowerUp 2022 we will review the available methods currently in practice and the new and upcoming technologies in creating GaN epi wafers.
15W WattUp PowerBridge Transmitter Increases Wireless Power Networks Charging Capability by 15 Times
By Press Release
Energous Corporation, a semiconductor supplier featuring RF-based wireless power networks, announced its new high-power WattUp PowerBridge transmitter. The device has received the Part 18 grant of equipment authorization for 15 watts of conducted wireless power transfer from the U.S. Federal Communications Commission (FCC)