SiC and GaN Power Devices Enable Decarbonization Goals

SiC and GaN Power Devices Enable Decarbonization Goals

At the recent?PowerUP Expo virtual Conference , industry leaders from a wide range of power electronics manufacturers presented their updates on product and system solutions across the spectrum of applications ranging from energy generation to end-use consumer devices. In this article, we will highlight a presentation made at this conference titled “WBG solutions drive decarbonization,” which was delivered by Adam White, Division President Power and Sensor System division, and Johannes Schoiswohl, head of the EPIC business line at 英飞凌 .

Silicon Carbide (#SiC ) and gallium nitride (#GaN ) are the two WBG materials that have been found the most successful in various power electronics applications. Their higher bandgap enables a greater than 10x increase in the critical electric field compared to silicon (Si). This, along with other material advantages, has translated to many key improvements over Si in power conversion such as faster switching, lower losses, improved high-temperature capability (with SiC), improved power density, and the enablement of simpler topologies in converter designs.?

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Accurate Characterization of Low-Voltage, Small-Form–Factor GaN FETs

By Ryo Takeda, Takamasa Arai, Ron Simpson and Mike Hawes

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Lower-voltage GaN FETs are reducing size, minimizing cooling requirements and improving efficiency. #galliumnitride #powerelectronics Keysight Technologies

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SiC and GaN usage in bidirectional power applications

By Stefano Lovati

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This article will explore the challenges and the technical solutions that allow silicon carbide (SiC) and gallium nitride (GaN) power switches to implement bidirectional power applications. #siliconcarbide

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SiC Devices for EV Chargers

By George Hariman

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SiC’s characteristics are perfectly suited for many of the tasks performed within an EV charging station. #electricvehicles

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China’s Export Controls on Gallium and Germanium: Impact on the Semiconductor Industry

By Stefano Lovati

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Power electronics, renewable-energy systems, electric vehicles and energy-efficient lighting could face challenges in meeting demand, although semiconductor companies were playing down the effects of the restrictions.

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B-TRAN: Ideal Power’s Next-Gen Power-Switching Technology

By Saumitra Jagdale

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B-TRAN shows potential as a game-changer in power-conversion technology. Ideal Power Inc.

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Interactive datasheets for analyzing MOSFET behavior

By Abhishek Jadhav

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Nexperia interactive datasheets equip engineers with real-time interaction and analysis processes of #MOSFET behavior.

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Precision Power Solutions for High-Voltage Electroporation

By Todd Huston

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Pulsed electric field, or electroporation, is an exciting development within the electrosurgery and life-science fields that enables many new treatments. As a result, the adoption of this technique is growing.?

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GAIA Converter’s New SWaP-Optimized DC/DC Front-End Module for Military-Grade EMC Simplifies Military Power Converter Design

By Maurizio Di Paolo Emilio

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The new front-end module is SWaP-optimized and meets the most stringent military and avionics standards when used with GAIA DC/DC converters.

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onsemi and BorgWarner expand strategic collaboration for silicon carbide with a lifetime value of over $1 Billion

By Maurizio Di Paolo Emilio

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BorgWarner will integrate onsemi EliteSiC 1200 V and 750 V silicon carbide power devices into its VIPER power modules for traction inverter solutions to increase performance of EVs.

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TECHNICAL ARTICLES

Péter Papp

Owner of PKN Group

1 年

"Decarbonization" means eliminate biological systems, Carbon and CO2 IS REQUIRED for plant life and do not play critical role in "Climate Change" so few hundreds of ppm CO2 would be better for plants and not killing the planet. Climate change is caused by factors outside of human activity such as fluctations of sun output energy and variations of Earth<>Sun trajectory..

Anna Marie Imbordino

Executive Level Media and Communication Strategist - Editorial Director - Multidisciplinary Artist

1 年

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