Semiconductor chips usher in a major breakthrough

Zinc sulfide (ZnS), as a wide bandgap semiconductor material, has been widely studied and applied since the early 20th century due to its unique optoelectronic properties. From its early use as cathode ray tube phosphor to its later applications in UV photodetectors, phosphors in LEDs, transparent conductive films, and nanotechnology, ZnS has demonstrated its great potential in the fields of photodetection, display technology, and new energy. With the advancement of science and technology, the application of zinc sulfide continues to expand, including environmental protection fields such as photoelectrocatalysis and air purification, and it is expected to continue to play an important role in the future and may open up more new application directions.

Since the 21st century, the third generation of semiconductor materials represented by gallium nitride (GaN), silicon carbide (SiC), zinc oxide (ZnO), and diamond have begun to emerge. The third generation of semiconductor materials has characteristics such as wider bandgap width, higher thermal conductivity, higher radiation resistance, and greater electron saturation drift rate.

The third generation of semiconductors, also known as wide bandgap semiconductors, are semiconductor materials represented by silicon carbide and gallium nitride. These materials have superior properties such as high frequency, high efficiency, high power, high voltage resistance, high-temperature resistance, and strong radiation resistance. They are key core materials and electronic components that support the independent innovation development and, transformation and upgrading of industries such as the new generation of mobile communications, new energy vehicles, high-speed rail trains, and energy Internet.

The third generation of semiconductor devices has the characteristics of high-speed response, high frequency, and high cut-off frequency, which can meet the needs of modern communications and information processing. Compared with traditional semiconductor devices, it has higher electron mobility and lower loss, higher energy conversion efficiency, and realizes efficient conversion of energy utilization. It has stronger pressure resistance and higher photoelectric stability, longer service life and lower maintenance cost.

Many countries and regions have focused on supporting third-generation semiconductors as strategic emerging industries. For example, China has introduced a series of policies to vigorously enhance the competitiveness of digital advantage industries such as advanced computing, new smart terminals, ultra-high-definition video, and network security, and actively promote innovation breakthroughs in core basic industries such as optoelectronics and high-end software, which provides a good policy environment for the development of third-generation semiconductors.

Some time ago, according to data released by the General Administration of Customs, in the first five months of 2024, China's integrated circuit exports were approximately US$62.613 billion, a year-on-year increase of 21.2%.

The global semiconductor market is a supermarket of over US$600 billion and over RMB 4 trillion, of which the Chinese market accounts for 1/3, but as the world's largest regional market, my country's semiconductor production capacity is highly dependent on imports.

With the rapid development of science and technology, semiconductor materials, as the core foundation of information technology and the electronics industry, continue to promote innovation and progress in various fields. In recent years, third-generation semiconductor materials have gradually become the focus of industry attention with their unique advantages.

It is expected that in the future, with the continuous advancement of the Internet and information technology, the demand for third-generation semiconductors will become higher and higher, and the compound growth rate from 2023 to 2028 will reach 30.83%, and the overall market size will show a stable and continuous growth trend.

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