The Role of MOSFETs in Revolutionizing Automotive Electronics

Metal-oxide-semiconductor field-effect Transistors (MOSFETs) play a crucial role in modern electronics, particularly within the automotive industry. These semiconductor devices are essential for managing power and ensuring the efficient operation of various automotive systems. In the automotive sector, MOSFETs are utilized in a wide range of applications including engine control units, electric vehicle powertrains, infotainment systems, and advanced driver-assistance systems (ADAS).

Nexperia’s premier SiC MOSFETs now come in the increasingly popular D2PAK-7

Nexperia announced that it is now offering its industry leading 1200?V silicon carbide (SiC) MOSFETs in D2PAK-7?surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80?mΩ RDSon values.

This announcement follows on from Nexperia’s late-2023?release of two discrete SiC MOSFETs in 3?and 4-pin TO-247?packaging and is the latest offering in a series that will see its SiC MOSFET portfolio swiftly expand to include devices with RDSon values of 17, 30, 40, 60?and 80?mΩ in flexible package options.

With the release of the NSF0xx120D7A0, Nexperia is addressing the growing market demand for high-performance SiC switches in SMD packages like D2PAK-7, which is becoming increasingly popular in various industrial applications including electric vehicle (EV) charging (charge pile, offboard charging), uninterruptible power supplies (UPS) and inverters for solar and energy storage systems (ESS). It is also further testimony to Nexperia’s successful strategic partnership with Mitsubishi Electric Corporation (MELCO), which has seen the two companies join forces to push the energy efficiency and electrical performance of SiC wide bandgap semiconductors to the next level, while additionally future-proofing production capacity for this technology in response to ever-growing market demand.

RDSon is a critical performance parameter for SiC MOSFETs because it impacts conduction power losses. However, many manufacturers concentrate on the nominal value, neglecting the fact that it can increase by more than 100% as device operating temperatures rise, resulting in considerable conduction losses. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and leveraged the features of its innovative process technology to ensure that its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDSon increasing by only 38% over an operating temperature range from 25?°C to 175?°C.

The tightest threshold voltage, VGS(th) specification, allows these discrete MOSFETs to offer balanced current-carrying performance when connected in parallel. Furthermore, low body diode forward voltage (VSD) is a parameter that increases device robustness and efficiency, while also relaxing the dead-time requirement during freewheeling operation.

Toshiba releases power MOSFETs with high-speed body diode that help to improve the efficiency of power supplies

东芝 Electronics Europe GmbH (“Toshiba”) has launched a new range of 650V N-channel power MOSFETs. The TK042N65Z5?and TK095N65Z5?in TO-247?package are the first high-speed diode (HSD) type products in the latest generation DTMOS VI series. This generation has a super junction structure suitable for switching power supplies in demanding applications including data centers and power conditioners for photovoltaic (PV) generators.

The two new power MOSFETs use intrinsic high-speed diodes to improve the important reverse recovery characteristics to enhance bridge and inverter circuit applications. Compared to the standard DTMOS VI products, the TK042N65Z5?and TK095N65Z5?achieve a 65% reduction in reverse recovery time (trr) with values of 160ns and 115ns respectively. Compared with Toshiba standard MOSFETs, the new products reduce the reverse recovery charge (Qrr) by 88% and drain cut-off current at high temperatures by up to 90% (TK042N65Z5). Additionally, the key figure of merit (FoM) of “drain-source On-resistance × gate-drain charge” (RDS(ON) * Qgd) has been reduced by approximately 72% compared with Toshiba’s existing TK62N60W5.

These significant improvements reduce power losses of equipment, which helps efficiency. For example, in a 1.5kW LLC circuit, the TK042N65Z5?shows around 0.4% improvement in power supply efficiency over the previous TK62N60W5. The new TK042N65Z5?and TK095N65Z5?have RDS(ON) values of 42mΩ and 95mΩ, respectively. They are capable of delivering drain currents (ID) up to 55A and 29A. Both devices are housed in a small TO-247?package.

A new reference design for an upgraded 1.6kW server power supply is now available based upon the new TK095N65Z5?device. Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0?SPICE model, which verifies circuit function in a short time, highly accurate G2?SPICE models, which accurately reproduce transient characteristics, are now available.

In addition to the already released 650V and 600V DTMOS VI products, Toshiba will continue to expand its lineup of DTMOS VI with high-speed diodes to enhance switching power supply efficiency, contributing to energy conservation.

英飞凌 AG introduces the SSO10T TSC package with OptiMOS? MOSFET technology.

With its direct top-side cooling concept, the package offers excellent thermal performance. This eliminates heat transfer into or through the PCB of the automotive electronic control unit. The package enables a simple and compact double-sided PCB design and minimizes cooling requirements and system costs for future automotive power designs. The SSO10T TSC is therefore well suited for applications such as electric power steering (EPS), EMB, power distribution, brushless DC drives (BLDC), safety switches, reverse battery, and DCDC converters.

The SSO10T TSC has a 5?x 7?mm2 footprint and is based on the established industry standard SSO8, a 5?x 6?mm2 robust housing. However, due to its top-side cooling, the SSO10?TSC offers more than 20?percent and up to 50?percent higher performance than the standard SSO8?– depending on the thermal interface (TIM) material used and the TIM thickness. The SSO10T TSC package is JEDEC listed for open market and provides wide second source compatibility. As a result, the package can be introduced quickly and easily as the future standard for top-side cooling.

The SSO10T package enables a very compact PCB design and reduces the system footprint. It also lowers the cost of the cooling design by eliminating vias, resulting in lower overall system costs and design effort. At the same time, the housing offers high power density and efficiency, thus supporting the development of future-proof and sustainable vehicles.

意法半导体 Enhances Power Performance with Automotive-Grade MDmesh DM9?MOSFETs

Automotive-grade 600V/650V super-junction MOSFETs in STPOWER MDmesh DM9?AG series deliver superior efficiency and ruggedness for on-board chargers (OBCs) and DC/DC converter applications in both hard- and soft-switching topologies.

With outstanding RDS(on) per die area and minimal gate charge, the silicon-based devices combine low energy losses with outstanding switching performance, setting a new benchmark figure of merit. Compared to the previous generation, the latest MDmesh DM9?technology ensures a tighter gate-source threshold voltage (VGS(th)) spread that results in sharper switching for lower turn-on and turn-off losses.

In addition, body-diode reverse recovery is improved, leveraging a new optimized process that also increases the MOSFETs’ overall ruggedness. The diode’s low reverse-recovery charge (Qrr) and fast recovery time (trr) make the MDmesh DM9?AG series ideal for phase-shift zero-voltage switching topologies that demand the utmost efficiency.

The family offers a selection of through-hole and surface-mount packages that help designers achieve a compact form factor with high power density and system reliability. The TO-247?LL (long-lead) is a popular through-hole option that eases design-in and leverages proven assembly processes. Among the surface-mount packages, the H2PAK-2?(2?leads) and H2PAK-7(7?leads) are optimized for bottom-side cooling with thermal substrates or PCBs featuring thermal vias or other enhancement. HU3PAK and ACEPACK? SMIT topside-cooled surface-mount packages are also available.

The first device in the new STPOWER MDmesh DM9?AG series is the STH60N099DM9-2AG , a 27A AEC-Q101?qualified N-channel 600V device in H2PAK-2, with 76mΩ typical RDS(on). ST will expand the family to provide a full range of devices, covering a broad range of current ratings and RDS(on) from 23m? to 150m?.

In conclusion,

MOSFETs are indispensable components in the automotive industry, driving innovation and efficiency across various applications. Their ability to manage high power and switch rapidly makes them ideal for a range of automotive systems, from electric vehicle powertrains and battery management to motor control and advanced driver-assistance systems (ADAS). The high efficiency, compact size, and robust reliability of MOSFETs contribute significantly to the performance and safety of modern vehicles.

As the automotive sector continues to evolve towards greater electrification and automation, the importance of MOSFET technology will only grow. These versatile semiconductor devices will play a pivotal role in meeting the increasing demands for energy efficiency, thermal management, and high-speed processing in future automotive applications. Embracing MOSFETs ensures that the automotive industry can achieve its goals of enhanced performance, improved fuel economy, and advanced safety features, paving the way for the next generation of smart and sustainable vehicles.