Renesas has announced the development of new-generation Si-based IGBTs for EV inverters

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A new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) has been developed by Renesas Electronics Corporation, a leading provider of advanced semiconductor solutions, and will be available with a small footprint and reduced power losses. AE5-generation IGBTs will be mass produced starting in the first half of 2023 in Naka factory and will be used in next generation electric vehicle (EV) inverters. Compared to the current-generation AE4 devices, the silicon-based AE5 IGBTs achieves a 10% decrease in power losses. This power savings will assist EV makers in conserving battery charge and extending driving range. These devices can achieve highest level of performance for IGBTs in the industry by successfully balancing the trade-offs between low power loss and robustness which will give more design freedom to create compact inverters with outstanding performance.

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