Refractory raw material deoxidizing agent Silicon Carbide Production Process

1. Raw Materials: The primary materials used are a mixture of silica sand (SiO2) and petroleum coke (C).
2. Heating: This mixture is placed in a high-temperature electric furnace where it's subjected to temperatures ranging from 1,600°C to 2,500°C. A small amount of sawdust and salt may also be added to aid the process.
3. Reaction: The high temperature induces a chemical reaction where carbon and silica combine to form silicon carbide according to the reaction: SiO2+3C→SiC+2COSiO_2 + 3C \rightarrow SiC + 2COSiO2+3C→SiC+2CO
4. Cooling and Crushing: Once the reaction is complete, the furnace is cooled. The resulting SiC crystals are extracted, crushed, and sorted by size for various applications.
5. Purification: Sometimes, SiC may go through additional processes to improve its purity, especially when used for electronic applications.

Silicon Carbide (SiC) is a highly versatile material valued for its hardness, thermal resistance, and chemical stability. Its wide range of applications includes use in abrasives, refractories, electronics, and steelmaking, where it serves as an effective deoxidizing agent. Whether in grinding wheels or high-tech semiconductors, SiC’s unique properties continue to make it indispensable in multiple industries.

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