Power Electronics News' Weekly Top Picks 4.8.2022
Power Electronics at APEC 2022: What’s Next?
APEC is one of the most important power electronics events. Many people from academia and the industry had the chance to discuss the latest on GaN and SiC. During the conference, I had the opportunity to speak with so many experts and ventured further and further into this amazing wide-bandgap ecosystem.
New Silicon Power MOSFET Technology Rivals GaN with Near-Zero Reverse Recovery and Low On-Resistance
This new silicon power MOSFET offers near-zero reverse-recovery losses, bringing an advantage to silicon that is usually seen only in gallium nitride technologies while maintaining the cost and compatibility advantages of silicon.
Multi-phase MHZ Converter with GaN
Gallium nitride (GaN) devices enable high-frequency, high-density power supplies desirable in aerospace, transportation, and medical applications. Certain design rules must be considered in laying out the printed-circuit board (PCB) and components.
A New 350 V GaN Power Transistor
The EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 m and a pulsed output current of 26 A, has been released into production by EPC. The EPC2050 is 1.95 mm by 1.95 mm in size. Because of its small size, power solutions can take up ten times less space than silicon counterparts.
Very good recap. Thanks for covering interesting topics and products.