MRAM memory: from storage to data processing

The advancement of technology in recent years has underlined the need for memory that satisfies the demands of modern computing. Static Random-Access Memory (SRAM), Dynamic Random-Access Memory (DRAM), Electrically Erasable Programmable Read-Only Memory (EEPROM), and flash memory are some of the current types utilized for this.

However, each of these technologies has limitations in distinct areas, making them unsuitable for cutting-edge computing. This is where Magnetoresistive Random-Access Memory (MRAM) comes in, a cutting-edge technology with low latency, low power, ageless endurance, zero volatility, and scalability.

The groundbreaking aspect of MRAM memory is the manner in which it stores data. It abandons the concept of implementing magnetic storage components utilizing current charges or electrical fluxes. They are made up of two ferromagnetic discs separated by an insulating layer. The data is interpreted by placing one of the discs in a fixed location on a magnet, while the second disc moves to match the magnetic field of the first disc, shifting from positive to negative. Because the logic of binary numbers is followed, interpretation is feasible.

This means that data may now be processed on memory chips as well as saved on them. As a result, many processors are no longer required to carry out this task. Large volumes of data kept in the memory network can be processed without needing to be transported using this paradigm. As a result, MRAM memory might be employed for a variety of applications ranging from system computing to storage.

This implies that data may now be processed as well as saved on memory chips. As a result, numerous CPUs are no longer needed to do this function. Using this paradigm, large amounts of data stored in the memory network may be processed without the need for transfer. As a result, MRAM memory may be used for a wide range of applications, from system computing to storage.

MRAM is currently considered a new technology, and it will take time to determine its full market potential and influence. It is already being used in industries that require to solve memory technology challenges by enhancing durability and performance, such as aerospace, automotive, defence, robotics, healthcare, IoT, edge computing, energy management and automation, artificial intelligence, and machine learning.

Samsung is ahead of the rest of the tech world

Samsung Electronics released a press release reporting the first worldwide MRAM memory-based computer demonstration. The business has successfully fused MRAM memory with semiconductor devices for powerful artificial intelligence processors. To solve the issue of low resistance in MRAM memory, Samsung chose to replace the standard current sum computing design with a resistance sum architecture.

The Samsung research team also hinted at the prospect of deploying MRAM memory for offloading biological neural networks, implying that its use in the field of in-memory computing might be considerably broader than previously thought. This accomplishment has already been identified as a watershed moment in the development of low-power artificial intelligence processors.

Conclusions

Finally, MRAM memory represents a significant advancement in the development of data storage technology for computer systems since it solves the difficulties that traditional memory has. It has improved read and write performance, endurance, power consumption, and volatility.

The issue with MRAM is not one of production; it is a milestone that was accomplished many years ago. However, the challenge comes in its execution, as the features of today's computer equipment make low-power-consumption memory unachievable.

Samsung Electronics has announced the creation of a novel architectural solution that substitutes current-sum systems with resistor-sum systems, making the most of MRAM memory in the area of sophisticated artificial intelligence devices.