Micron is First to Deliver 3D Flash Chips with More Than 200 Layers
News Source:- >>
Micron Technology, a memory company, based in Boise, Idaho, claims to have reached commercial manufacturing of a 232-layer NAND flash memory chip. It's been a close competition for the first such chip to get the 200-layer threshold. Rivals are currently offering 176-layer technology; some even have operational chips in their possession. When compared to competitor chips, the new Micron technology packs in 14.6 gigabits per square millimeter, nearly doubling the density of data stored per unit area. Each of its 2-terabyte containers, which are scarcely larger than a centimeter on a side and have 1-terabit chips inside, can store around two weeks' worth of 4K footage. Alvaro Toledo, vice president of Micron's data-center storage, notes that 81 trillion gigabytes (81 zettabytes) of data will be produced in 2021, while International Data Corp. (IDC) anticipates 221 ZB in 2026. "Storage has to innovate to keep?up," Toledo says.
NAND flash manufacturers have been boosting the density of stored bits by cramming multiple bits into a single device and adding more layers. The memory cells on the Micron chip each have a capacity of three bits. That is, it is possible to distinguish between eight states thanks to the charge stored in each cell. However, most devices are called TLC and have three bits per cell. Four-bit products called QLC are also offered. A 162-layer chip with a 15 Gb/mm2 areal density was one QLC chip Western Digital researchers exhibited at the IEEE International Solid-State Circuits Conference earlier this year. Additionally, experts from Kioxia presented 5-bit cells at the IEEE Symposium on VLSI Technology and Circuits last month.
Get in Touch with IEBS | Email us:- '[email protected]'