Ion Implantation in GaN Power Devices
Wide Band Gap (WBG) semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are expected to play an increasingly important role in power electronics devices. Higher efficiency, power density, and switching frequency, are some key benefits they provide compared to legacy silicon (Si) based devices. Ion implantation is the dominant method of creating selective doping in silicon devices. Several challenges exist in its use for WBG device processing. In this article, we will highlight some of these, while also summarizing some of their potential applications in GaN power devices.
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