Infineon Technologies launches the next-generation silicon carbide technology CoolSiC? MOSFET G2 to promote the incremental market for inductors.

CoolSiC? MOSFET Generation 2 (G2) technology continues to leverage the performance advantages of silicon carbide to improve efficiency during power conversion by reducing energy losses. This brings huge advantages to customers in power semiconductor applications such as photovoltaics, energy storage, DC electric vehicle charging, motor drives and industrial power supplies.

Compared with previous generations, electric vehicle DC fast charging stations using CoolSiC? G2 can reduce power losses by up to 10% and achieve higher charging power without compromising form factor. Traction inverters based on CoolSiC? G2 devices can further increase the range of electric vehicles. In the field of renewable energy, solar inverters using CoolSiC? G2 can achieve smaller size while maintaining high power output, thereby reducing cost per watt.

Dr. Peter Wawer, President of the Zero Carbon Industrial Power Division at Infineon Technologies, said: “The megatrend is to use new and efficient ways to generate, transmit and consume energy. With the CoolSiC? MOSFET G2, Infineon has taken silicon carbide to a new level. The new generation of silicon carbide technology enables manufacturers to design lower-cost, more compact, more reliable and more efficient systems more quickly, saving energy while reducing CO2 emissions per watt on site. This fully reflects Infineon’s unremitting efforts to promote innovation in the decarbonization and digitalization of the industrial, consumer and automotive fields.”