Indium Phosphide (InP) in Semiconductor Technology
Indium Phosphide (InP) is a binary semiconductor material composed of indium and phosphorus (Source). It belongs to the III-V semiconductor group and has a zincblende crystal structure (Source).
Indium Phosphide has a direct bandgap of 1.34 eV, making it well-suited for fiber optic communication and high-speed data transmission. Its ability to efficiently emit and absorb light in the infrared spectrum is a key feature that enhances its application in optoelectronics and phosphide-based materials.
The crystal properties of Indium Phosphide include:
The structural properties of Indium Phosphide play a crucial role in its suitability for semiconductor technology (Source).