Improving SiC Manufacturing, Battery Management Systems, Failure Rates of Power Devices, GaN Power ICs, Fusion Energy and more!
Maurizio Di Paolo Emilio
Content Editor & Technical Writer | Ph.D in Physics | Power Electronics, Renewable Energy, Embedded Systems, Quantum Computing
Welcome to my newsletter dedicated to power electronics enthusiasts. If you'd like to contribute to it, please don't hesitate to contact me. Today, the newsletter reached more than 13,550 subscribers! Thank you!
Silicon carbide (SiC) power devices offer a combination of advantages that make them superior to Silicon-based devices in many power electronics applications, including electric mobilty, renewable energy, and industrial applications. These advantages include higher efficiency, reduced losses, smaller size, higher power density, faster switching speeds, higher temperature operation, reduced parasitic capacitance, and higher reliability.
Improving silicon carbide yield and productivity is essential for accelerating its adoption. To fill this gap, Resonac Corporation and Soitec have recently entered into an agreement to develop 200mm (8-inch) SmartSiC SiC wafers utilizing Resonac substrates and epitaxy processes. This collaboration marks a significant advancement for the implementation of Soitec’s high-yield silicon carbide technology in Japan and other global markets.
In an interview with Emmanuel Sabonnadière, Executive Vice-President for Automotive & Industrial of Soitec, Power Electronics News will explore the details of this collaboration and how it can help to promote the wide adoption of the SmartSiC technology.
New Trends in Technologies for EV Battery Management Systems
By Giordana Francesca Brescia
Electric vehicles are becoming more complex, and the traditional battery management system (BMS) needs to be smart enough to support new technologies such as solid-state batteries (SSBs), smart junction boxes and intra-vehicle BMSes. This article is based on a report from Gartner and discusses how BMSes should evolve with the emergence of new technologies for vehicles and batteries.
Particularly critical innovations for EVs are integration with renewable energy storage, more fast-charging capabilities and eco-compatible batteries. Other key technologies involve communication among the various subsystems or between the vehicle and the grid, so the security in the protocol used should also be considered to avoid potential cyberattacks.
Power America's Virtual SHORT COURSE will be presented online in real-time Nov. 12-14, 2024, with an opportunity for live Q&A with the instructors. FIFTEEN experts from fifteen industry/academia entities will be sharing market outlook, and their power SiC/GaN knowledge in substrates, epitaxy, device design & fabrication, modules & packaging, reliability and ruggedness, bidirectional technology, and key power applications.
The successful ICSCRM2024 tutorial session material is part of this SHORT COURSE with the same instructors presenting "live" longer sessions!
For information and to register please visit:?
Sponsorship opportunities are available.
With a long history of hosting successful technology forums in support of electronica’s conference program, AspenCore is once again pleased to host the Power Electronics Forum at electronica 2024.
The forum is located directly in the exhibition hall A5. The booth number is A5.351 (Power Efficiency Stage). All electronica visitors can attend the forum free of charge.
The in-person version of the forum will take place at electronica (Nov. 12–15 in Munich, Germany), followed by a virtual version of the forums on Jan. 15-16, 2025
Factors affecting Failure Rates of Power Devices from Cosmic Radiation
By Sonu Daryanani
Energetic particles affect semiconductor chips such as memories, processors, and analog and power devices in many different ways. The failure rate of devices is dependent on the amount of radiation that the part is exposed to and is an important factor in not just space-based, but also ground-based power converter designs. In this article, based on a whitepaper by Littelfuse, we discuss the key factors that affect failure rates of cosmic devices due to cosmic radiation.
Zap Energy Secures $130M to Accelerate Fusion Power Development and Reveals Century Test Platform
By Maurizio Di Paolo Emilio
Zap Energy, a pioneering fusion energy company, has reached a significant milestone by securing $130 million in fresh capital while launching operations of its new high-rep-rate fusion technology test platform, Century. The company, based in Everett, Washington, is advancing its compact fusion systems with cutting-edge technologies, aiming to achieve commercially viable fusion power on an accelerated timeline.
Century marks the first completely integrated demonstration of important fusion power plant technology, including one of the biggest experiments of a liquid metal blanket, a necessary component for controlling materials encountering plasma. Significantly advancing Zap’s fusion research, Century effectively ran over 1,000 consecutive plasma shots in less than three hours in its early operations.
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GaN Power IC: Streamlining Design and Boosting Efficiency in Power Electronics
By Maurizio Di Paolo Emilio
In the fast evolving field of power electronics, power converter design mostly depends on efficiency, compactness, dependability, and economy. The GaNSlim Power IC, a new generation of extremely highly-integrated GaN power ICs, has been unveiled by Navitas Semiconductor. By means of improved integration and thermal performance, this solution seeks to simplify and hasten the evolution of small, high-power-density applications.
In an interview with Power Electronics News, Tom Ribarich, Sr. Director Strategic Marketing at Navitas, discussed this latest innovation. With an ultra-low startup current below 10 μA, GaNSlim solutions are compatible with industry-standard controllers and eliminate the need for high-voltage startup circuits. Target applications include chargers for mobile devices and laptops, TV power supplies, and LED lighting.
BiGaN Switches for Extensive Power Management
By Diego de Azcuénaga
Protecting USB ports, switching circuits for devices supplied by different sources, and high-side load switches from surges all depend on bidirectional voltage blocking and current conduction. Until now, designers have only been able to use two N-type MOSFETs connected back-to-back in a common-source configuration for this purpose. This approach involves two components and has restrictions due to on-resistance (RDS(on)), safe operating area (SOA), and other characteristics (Figure 1). The bi-directional gallium nitride (BiGaN) switch is an innovative solution that reduces power dissipation and boasts a greatly reduced footprint.
PowerUP Confirms its Mission as Dedicated Forum on Power Electronics for Green Energy Transition
By Filippo Di Giovanni
Aspencore and Tecno, two companies in technology media, and engineering, have recently organized the PowerUP and Fortronic Conference and Exhibition in Milan, Italy. Fortronic is an organization specializing in power electronics, which gathers industry professionals to debate and delve into key trends, innovations, and challenges.
Semiconductor Bust-Boom Cycles
By Asif Jakwani
Semiconductor market demand and supply are rarely in equilibrium and bust-boom cycles are a clear manifestation of this unique characteristic of the industry.?Although there is a long latency in bringing new semiconductor supply to the market, the primary reason for disequilibrium in demand and supply is the continued penetration of semiconductors in highly disruptive new applications.
Navitas Announces IntelliWeave, an Innovative Digital Control Technique for Improving Efficiency in AI Data Centers
By Maurizio Di Paolo Emilio
At the IEEE Energy Conversion Congress and Expo (ECCE), Navitas Semiconductor will present “IntelliWeave”—a proprietary digital control technology designed to enhance the efficiency of next-generation AI data center power supply units (PSUs).
Würth Elektronik Releases New Ferrite Rings Designed for Electromobility Applications
By Maurizio Di Paolo Emilio
Würth Elektronik has introduced the WE-OEFA-LFS ferrite, an oval-shaped ferrite ring designed for low-frequency interference suppression. Due to its distinctive oval configuration, the ferrite ring facilitates effortless sliding over busbars for interference mitigation. The MnZn core composition renders it ideal for mitigating low-frequency interference. The primary application domain for the novel ferrite is electric vehicles (EVs).
Vicor Unveils New High-Density Automotive-Grade Power Modules
By Maurizio Di Paolo Emilio
Vicor has introduced three automotive-grade power modules for 48-V EV systems that will support OEM and Tier 1 automobile production in 2025 and have an industry-leading power density. Vicor-designed AEC-Q100-certified integrated circuits that have successfully finished the PPAP process with automotive clients are used in the BCM6135, DCM3735 and PRM3735.
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