How we handle errors caused by programming/reading in different temperatures

How we handle errors caused by programming/reading in different temperatures

Imagine a very skilled proofreader employed by a huge book publishing company. The proofreader can correct up to 72 typos for every 1,000 words. However, no matter how good the proofreader is, it would be a struggle to fix more than 72 typos, leaving several mistakes that could cause possible confusion for the readers.??

The Cross-Temperature Challenge?

The cross-temperature effect has always been a perennial challenge. It is a leading cause of the increase in error bits. This happens when data is programmed and read at different temperatures.?

Many applications, such as those in automotive, run where temperatures vary greatly. Maps, infotainment, operating systems, self-driving car programs, for example, are written to the storage device in controlled environments but the vehicles run in different climates that could range from scorching to freezing. Dashcams, drive recorders, data loggers, and other applications also write and read data in a broad range of temperature scenarios.?

Which is Worse???

Low-Temp Program/High-Temp Read vs. High-Temp Programming/Low-Temp Read?

Tests conducted by ATP Electronics show that programming at low temperatures and reading at high temperatures lead to higher error bits. The following graph shows that the number of unrecoverable error bits increases as the read temperature increases over time.??

Is a High-Endurance Drive Enough? What Really Happens When Flash is Near End-of-Life??

A high-endurance drive offers longer service life, thus enabling you to write more data over an extended period. However, higher endurance is meaningless if the data gets corrupted over time due to the lack of a cross-temperature error correction algorithm.?

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In its initial state, flash storage devices have “fresh NAND” and can easily handle the impact of cross-temperature effects. As the aging memory cells go through numerous P/E cycles and get subjected to varying temperatures, voltage shifts occur.?

Voltage shifts lead to inaccurate data sensing. Written or programmed data becomes difficult to read, introducing error bits and ultimately, uncorrectable errors.?

What You Need: ATP’s Robust Cross-Temp Error Handling Solution?

ATP Electronics’ Cross-Temp Error Handling Solution maintains the reliability and data integrity of NAND flash under severe temperature changes and even towards the storage device’s end of life.?

How it works:?

  1. Use of known-good-die (KGD) industrial-grade NAND flash with 5K+ P/E cycles. This ensures minimal impact from cross-temperature variations from the “fresh” or “initial state” of the NAND.?

  1. A comprehensive 125°C cross-temperature error correction algorithm in Read Retry + Auto Read Calibration to ensure that data can be read (recovered) and not identified as uncorrectable due to voltage threshold shift.?

a. Read Retry is automatically activated when voltage distribution shifts. It is a scale of voltage calibration method to find a reference voltage for data reading.?

b. Auto Read Calibration (ARC) is a subtle and more precise voltage adjustment that is applied if the read still fails for bit errors beyond the ECC threshold and is unable to be judged correctly by the Read Retry scale. This prevents the read areas to be misjudged as uncorrectable errors.?

The following illustration shows how ATP’s robust error-handling algorithm capably handles cross-temperature environments to mitigate errors and ensure data integrity.?

We are Here for You: WE BUILD WITH YOU?

Choosing the right storage for your applications is critical. ATP Electronics is committed to meeting your specialized memory and storage needs with specialized solutions.??

?For more information on ATP’s Cross-Temp Error Handling Solution, ATP Products, and other ATP Technologies, please visit the ATP website or contact an ATP Representative .?

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