GaN Technology, Batteries & EVs, and More!
GaN Half-Bridge Power IC Maximizes Performance, Cost Reduction
Gallium nitride is a next-generation semiconductor technology with a large bandgap that has become critical in the development of sophisticated power electronics. It is up to 20× faster than silicon and can provide up to 3× the power or charge in half the size and weight of Si devices
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Weekly Top Picks
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Wide Bandgap Materials and Packaging Innovations Driving the Future of Power Conversion Optimization
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