Fuji Semiconductor SiC IGBT Modules and SiC Based Schottky Barrier Diodes
SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation, and high-temperature operation. Power semiconductors that make use of SiC achieve a significant reduction in energy consumption, and can be used to develop smaller and lighter products. Fuji Electric Hybrid SiC modules consist of a SiC-based SBD (Schottky Barrier Diode) and Si-based IGBT (Insulated Gate Bipolar Transistor). With a capacity line-up ranging from 600 V to 3300 V, this series contributes to energy saving and miniaturization in various types of industrial equipment, general motor drives UPS, PCS, and more.
Information about these devices can be found at the following web pages:
https://americas.fujielectric.com/products/semiconductors/sic-devices/sic-modules/#prodfinder
https://americas.fujielectric.com/products/semiconductors/sic-devices/sic-schottky-barrier-diodes/
If you have an interest in samples, data, pricing, or simply would like to chat it over with us or our engineers, please get in touch!