Epitaxial Growth and Manufacturing of GaN Films, Reliability, Lithium Batteries, Flyback Converter, T&M Solutions for EVs and more!
Maurizio Di Paolo Emilio
Content Editor & Technical Writer | Ph.D in Physics | Power Electronics, Renewable Energy, Embedded Systems, Quantum Computing
Welcome to my newsletter dedicated to power electronics enthusiasts. If you'd like to contribute to it, please don't hesitate to contact me. Today, the newsletter reached more than 13,500 subscribers! Thank you!
The advancement of semiconductor technology depends on the epitaxial growth of GaN films, especially in high-frequency and power devices. But because of mismatched characteristics between substrates and epitaxial layers—such as lattice constant and thermal expansion coefficient mismatches—ability to grow high quality and scalable GaN epitaxial layers on non-native substrates, such as silicon (Si) and sapphire, suffer great difficulties and prevent unlocking the full potential of GaN. Using SEMI-spec and CMOS fab-friendly QST engineered substrates, which very closely match to the CTE of GaN over a wide temperature range, Vanguard International Semiconductor (VIS) solves these problems and allows the deposition of crack-free, high quality and easily scalable high-performance GaN epitaxial layers on 200 mm platform. In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing their investment in GaN technology and its broader implications for the semiconductor sector.
The epitaxial growth of high-quality GaN films is crucial for advancing semiconductor technology, particularly in power electronics and high-frequency applications. However, this process faces significant challenges due to mismatched parameters between non-native substrates and epitaxial layers, such as lattice constant and thermal expansion coefficient mismatches. VIS addresses these issues by using SEMI-spec and CMOS fab-friendly QST engineered substrates, which very closely match to the CTE of GaN over a wide temperature range, enabling the deposition of crack-free, high-quality and easily scalable high-performance GaN epitaxial layers on 200 mm platform (scalable to 300 mm).
According to VIS, the mismatch of the lattice constant and the coefficient of thermal expansion (CTE) for different materials systems in GaN device technology must be carefully engineered. The CTE mismatch between the substrates and GaN epitaxial layers was alleviated by using QST engineered substrates. These substrates possess a nearly identical CTE as GaN and related materials over a wide temperature range, allowing for the possibility of depositing epitaxial GaN layers for power devices with voltage ratings of 650 V and beyond on any substrate diameter.
Combining DC and Switching Losses in GaN Transistors Provides Accelerated Power Cycling Testing
by Filippo Di Giovanni
The main goal of implementing power cycling is to gauge the long-term reliability of power transistors, which, during their normal operation, are subject to frequent temperature swings. Power cycling in the power semiconductor industry is therefore a crucial reliability test used to evaluate the longevity and performance of power devices under both thermal and electrical stress.?This test consists in periodically applying a DC to the device, causing self-heating and cooling, which efficiently represents actual operating conditions. During power cycling, the device is mounted on a heat sink, and a current is periodically applied.?This leads to power loss and a rise in the semiconductor’s temperature.
Enhancing GaN Efficiency: Atomera’s MST and Sandia Labs Partnership
by Maurizio Di Paolo Emilio
Atomera and the Center for Integrated Nanotechnologies (CINT) at Sandia National Laboratories have agreed to work together to test and improve Mears Silicon Technology (MST) for growing GaN on Si surfaces. The goal of the engagement is to validate that the improvements already seen in the material quality of GaN epitaxial films grown on MST silicon substrates translate to improved electrical performance of transistors built on the material.? One of the expected outcomes from the project will be the fabrication and testing of high-voltage transistors pushing the greater than 650V regime which will be critical to the adoption of the technology.
Solid Electrolyte Marks a Turning Point in High-Performance Lithium Batteries
by Filippo Di Giovanni
In a recent press announcement, imec together with other 13 partners collaborating in a funded project named “SOLiDIFY” and with a budget of €7.8 million, unveiled the prototype of a high-density lithium-metal battery made with a solid electrolyte, a step that will accelerate the introduction of batteries with remarkable performance improvement for the EV (electric vehicle) market.
70VDC-150VDC to 12VDC-0.5A, 5VDC-1A Isolated DC-to-DC Flyback Converter Using TNY278
By Hesam Moshiri
DC-to-DC converters are the most commonly used circuits in electronic devices. However, commercial “isolated” DC-to-DC converter modules are expensive, have limited input/output voltage/current ranges, and sample circuits are rare. This article aims to tackle the design complexity of such circuits and use a conventional AC-to-DC controller chip. The result is an isolated DC-to-DC flyback switching power supply that converts a wide DC input range (70V-150VDC) to 12VDC-0.5A and 5VDC-1A. The input voltage range could be modified further with minor modifications.
Wine Down Friday with Vincotech’s Edoardo Guiotto
By Maurizio Di Paolo Emilio
It’s time for another Wine Down Friday! It’s great to have Edoardo Guiotto, VP of sales and marketing at Vincotech, with us today. It’s amazing how far he has come in the field of power electronics. Edoardo has worked in many different technical and business jobs. He will talk about important parts of his work, the newest trends in the market for power semiconductors and how Vincotech encourages new ideas while keeping good relationships with customers.
Accelerating Electric Drivetrain Design Insights with T&M Solutions
by Chun Soong Wong
Optimizing electric drivetrains can be a complex and comprehensive process that requires extensive measurements to characterize component behavior and demanding tests of overall system performance. The automotive industry is shifting to electrification to reduce emissions and fossil fuel dependency. This transformation has spurred rapid innovation in electric drivetrain design to enhance performance, efficiency, and reliability. Precise measurement and analysis of electric drivetrains can bring critical insights into their functioning and behavior.
Reliability of SiC and GaN
by Giovanni Di Maria
Recent years have seen an increasing migration from Silicon to Silicon Carbide (SiC) and Gallium Nitride (GaN) in power electronics applications. In the last decade, the latter has been entrusted to SiC and GaN semiconductors, which undoubtedly pave the way for an electrified and robust future. Thanks to their intrinsic properties, wide bandgap semiconductors are progressively replacing traditional silicon-based devices in many power applications. Silicon has now had its day and the reliability of its applications has always been very high. Now, it is necessary to verify whether, in the long term, the two new semiconductors may offer the same safety prospects and whether they will be dependable for designers in the future.
Infineon Introduces Ultra-High Current Density Power Modules to Support High-Performance AI Computation
By Maurizio Di Paolo Emilio
Infineon Technologies AG is introducing the TDM2354xD and TDM2354xT dual-phase power modules, which offer superior power density for high-performance AI data centers. These modules provide genuine vertical power delivery (VPD) and the industry’s highest current density of 1.6 A/mm2. The TDM2254xD dual-phase power modules, launched by Infineon earlier this year, are being followed.
SuperBear – A Novel Powertrain Solution for Electric and Hybrid Vehicles
By Maurizio Di Paolo Emilio
Neapco Inc., a Tier 1 automotive supplier in the U.S., has partnered with European Elaphe Propulsion Technologies, a pioneer in next-generation electric vehicles, to create an innovative electric powertrain solution for electric and hybrid vehicles, named SuperBear. The powertrain utilizes patented bearing and e-motor technology to achieve the maximum torque in a small configuration, delivering 150 Nm/L or equivalent to 4250 Nm per cubic inch.
CISSOID’s SiC Inverter Control Module Enhances Hydro Leduc’s Efficient and Modular ePTO Solution
By Maurizio Di Paolo Emilio
CISSOID has announced that its SiC Inverter Control Module (ICM) has been selected by Hydro Leduc, a distinguished manufacturer of hydraulic components, for its innovative highly efficient, and modular Electric Power Take-Off (ePTO). This innovative ePTO technology facilitates the electrification of trucks and various off-road vehicles. CISSOID’s ICM not only energizes and regulates Hydro Leduc’s small and efficient inverter but also significantly expedites its development cycle.
For More Information, please visit the following links: