Empowering Innovations: Tracing the MOSFET Evolution and its Crucial Role in Driving Future Technologies

The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a pivotal semiconductor device central to modern electronics. Operating as a switch or an amplifier, its ability to control the flow of electrical signals with precision has transformed the landscape of electronic circuits. The MOSFET's evolution has played a crucial role in powering advancements in various industries, from consumer electronics to power systems. This short description aims to capture the essence of the MOSFET's significance and its continuous journey in driving innovation and efficiency in next-generation products.

To meet the needs of next-generation solutions, 英飞凌 is expanding its CoolMOS? S7?family of high-voltage superjunction (SJ) MOSFETs. The devices are aiming at SMPS, solar energy systems, battery protection, solid-state relays (SSR), motor-starters and solid-state circuit breakers, as well as PLCs, lighting control, HV eFuse/eDisconnect, (H)EV on-board chargers.

The portfolio extension includes innovative QDPAK top-side cooling (TSC) packages and offers a wide range of features in a small footprint. This makes it highly advantageous for low-frequency switching applications while optimizing cost positioning. Thanks to the novel high-power QDPAK packaging, they offer an R DS(on) of only 10?mΩ, which is the lowest on the market in this voltage class and the lowest in SMD packages. By minimizing conduction losses of the MOSFETs, the CoolMOS S7/S7A solutions contribute to higher overall efficiency and provide an easy and cost-optimized way to improve system performance.

The CoolMOS S7?power switches also effectively manage heat dissipation with improved thermal resistance. Thanks to the innovative and efficient QDPAK packaging, they also reduce or even eliminate the need for heat sinks in solid-state designs, resulting in more compact and lighter systems. The MOSFETs are available in both top-side and bottom-side variants, and feature high-pulse current capability, enabling them to handle sudden surges of current. In addition, they exhibit body diode robustness to ensure reliable operation during AC line commutation.

With fewer components required, they reduce part count, resulting in flexible system integration, lower BOM costs, and total cost of ownership (TCO). In addition, these MOSFETs enable shorter reaction times, particularly when breaking a current, facilitating smoother and more efficient operation.

Availability

The new 600?V industrial grade CoolMOS S7?and automotive grade CoolMOS S7A SJ MOSFETs for static switching are available in both top-side (TSC) and bottom-side cooling (BSC) QDPAK (PG-HDSOP-22) variants and can be ordered now.

More information is available at www.infineon.com/s7 and www.infineon.com/s7a

The new module has a drain current (DC) rating of 250A and uses the company’s third generation SiC MOSFET chips. It is suitable for applications that use DC1500V, such as photovoltaic power systems and energy storage systems. Volume shipments start today.

Industrial applications like those mentioned above generally use DC1000V or lower power, and their power devices are mostly 1200V or 1700V products. However, anticipating widespread use of DC1500V in coming years, 东芝 has released the industry’s first 2200V product.

MG250YD2YMS3?offers low conduction loss with a low drain-source on-voltage (sense) of 0.7V (typ.). It also offers lower turn-on and turn-off switching loss of 14mJ (typ.) and 11mJ (typ.) respectively, an approximately 90% reduction against a typical silicon (Si) IGBT. These characteristics contribute to higher equipment efficiency. Realizing low switching loss also allows the conventional three-level circuit to be replaced with a two-level circuit with a lower module count, contributing to equipment miniaturization.

Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.

ROHM Semiconductor Americas has developed power stage ICs with built-in 650V GaN HEMTs and gate driver - the BM3G0xxMUV-LB series. The devices are ideal for primary power supplies inside industrial and consumer applications such as data servers and AC adapters.

Consumer and industrial sectors more and more demand greater energy savings to achieve a sustainable society in the last few years. However, while GaN HEMTs are expected to significantly contribute to greater miniaturization and improved power conversion efficiency, the difficulty in handling the gate compared to silicon MOSFETs requires the use of a dedicated gate driver. In response, ROHM developed power stage ICs that integrate GaN HEMTs and gate drivers into a single package by leveraging core power and analog technologies, facilitating mounting considerably.

On top, the BM3G0xxMUV-LB series (BM3G015MUV-LB, BM3G007MUV-LB) incorporates additional functions and peripheral components designed to maximize GaN HEMT performance along with 650V GaN HEMTs - the next generation of power devices. And ROHM’s features such as a wide drive voltage range (2.5V to 30V) enable compatibility with virtually any controller IC in primary power supplies - facilitating replacement of existing silicon (Super Junction) MOSFETs. This makes it possible to simultaneously reduce component volume and power loss by approx. 99% and 55%, respectively, achieving higher efficiency in a smaller size.

ISAAC LIN, General Manager, PSADC (Power Semiconductor Applications Development Center), Delta Electronics, Inc.“GaN devices are attracting a great deal of attention in the industries as a device that greatly contributes to the miniaturization and energy saving of equipment.

ROHM's new products have realized high speed and safe gate drive by using ROHM's original analog technology. These products will further promote the use of GaN power devices, which are expected to grow.”

Product Lineup

A wide drive voltage range (2.5V to 30V), short propagation delay, and fast startup time enable compatibility with virtually any controller IC in primary power supplies.

Application Examples

Optimized for primary power supplies (AC-DC, PFC circuits) in a variety of applications.

Consumer: Home appliances, AC adapters, PCs, TVs, Refrigerators, Air ConditionersIndustrial: Servers, Office automation devices

EcoGaN?

Refers to ROHM’s new lineup of GaN devices that contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.

The new AQY206GV relay features a load voltage of 600?V in a miniature SSOP package and ensures quiet, fast and bounce-free switching in a wide range of applications like modern industrial equipment, testing and measuring equipment, inspection machines as well as multi-point recorder.

Benefiting from high-speed operation due to small T-on and T-off, a low on-resistance of typically 8?Ohms and an I/O isolation voltage of 1,500?Vrms, AQY206GV relays can withstand high operating temperatures of up to +105?degrees Celsius.

“Our new AQY206GV MOSFET relays are the perfect extension to our proven HF high-functioned series as they offer high capacity switching with low input power in a miniature SSOP package,” comments Chaithra Bhat Beedubail, Product Manager at Panasonic Industry.

Learn more about Panasonic Industry’s new PhotoMOS? AQY206GV MOSFET relays.

In conclusion, the MOSFET stands as a silent force behind the scenes, propelling the progress of technology into new realms. From its humble beginnings to its current status as a fundamental building block in electronic circuits, the MOSFET's journey reflects the dynamic nature of innovation. Its adaptability and efficiency make it an indispensable component, contributing to the success and evolution of next-gen products across diverse industries. As we continue to push the boundaries of what is possible, the MOSFET remains a steadfast partner, quietly powering the future of technological advancements.