Did you miss it?
Just in case you weren't able to join ROHM Semiconductor at EETech’s PowerUP Virtual Expo, here's your opportunity to view Ming Su’s presentation on Enabling Superior Power Conversion Efficiency with State-of-the-Art SiC Devices. For added convenience, we have included complementary presentations, on our latest Gate Drivers and shunt resistors linked below. Feel free to contact us for any questions or additional details by clicking here to schedule a one-on-one with a ROHM expert today.
Enabling Superior Power Conversion Efficiency with State-of-the-Art SiC Devices
As a pioneer and leading supplier, ROHM offers among the industry’s largest lineup of SiC power devices for a broad range of applications and industries. From discrete components such as SBDs and MOSFETs that provide breakthrough performance to power modules incorporating multiple SiC devices, ROHM provides products and solutions to suit a variety of needs.
New Automotive Qualified High Current Isolated Gate Driver
ROHM’s new BM6112 gate driver provides the high currents (20A) and gate drive voltages (20V) necessary for directly driving single SiC MOSFETs while minimizing I/O delay time to less than 150ns. Additional features, including multiple protection functions and 3750Vrms galvanic isolation, allow designers to maximize SiC MOSFET performance in industrial, automotive, and consumer applications.
ROHM High Power Shunt Resistors
The GMR series of shunt resistors utilizes a novel high heat dissipation structure to achieve the industry's highest rated power along with superior reliability. At the same time, superior TCR in the low-ohmic region ensures greater accuracy, making them ideal for current detection in motors and power supply circuits used in automotive systems and industrial equipment.
