Creating Future-Ready Devices with SiC and GaN
Maurizio Di Paolo Emilio
Content Editor & Technical Writer | Ph.D in Physics | Power Electronics, Renewable Energy, Embedded Systems, Quantum Computing
Despite the fact that semiconductor technology is thriving today, more devices and systems are still being produced using traditional power-electronic systems. It is essential to ensure that the manufacturing of various devices and technologies sustainably takes place, keeping in mind different safety and environmental norms along with improving efficiency.
Power electronics technologies have undergone a radical transformation following the introduction of?wide-bandgap (WBG) ?devices, such as silicon carbide and gallium nitride. These materials, in fact, have characteristics that make them particularly suitable for applications that operate at high voltages and high switching frequencies, offering better efficiency and thermal management than the most advanced silicon-based power devices.
Last August, PowerAmerica organized the Wide Bandgap Summer Workshop, which focused on the topic “SiC and GaN: The Future Is Now.” Victor Veliadis, PowerAmerica’s executive director and CTO, and other industry leaders gave presentations on the latest in the business and technology of SiC and GaN power semiconductors and applications.
PowerAmerica is a member consortium with industries, universities and national labs, and the goal is to accelerate the adoption of WBG power electronics.
PEN eBook December 2022 – Power Supply Design
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Robots have diverse applications in various markets and come in many guises, including service robots, collaborative robots (cobots),?industrial robots ,?autonomous drones , and?automated guided vehicles . One of the critical factors for a successful robotic application is ensuring optimal motor drive design. Silicon-based motor drives require a compromise between efficiency and size. For example, a higher switching frequency enables smaller passive components but results in greater heat dissipation caused by considerable switching losses. It has been suggested that this compromise can be overcome by replacing silicon switches with gallium nitride high-electron–mobility transistors (HEMTs). This article investigates whether this holds in a prototype GaN-based motor drive....
Electrical Engineer, Project management, Agile Methodologies
1 年___________________________ CoolSiC? MOSFET, Sixpack __Infineon Technologies ___ FS03MR12A6MA1LB active and preferred FS03MR12A6MA1B active and preferred IMBF170R1K0M1 active and preferred _____________________________ CoolSiC? MOSFET Discretes ___Infineon Technologies ____ FS05MR12A6MA1B active and preferred
Electrical Engineer, Project management, Agile Methodologies
1 年Infineon introduces the revolutionary CoolSiC? MOSFET technology which enables radically new product designs. In comparison to traditional Silicon-based switches like IGBTs and MOSFETs, the Silicon Carbide (SiC) Power MOSFET offers a series of advantages. CoolSiC? MOSFET products in 2000 V, 1700 V, 1200 V, and 650 V target photovoltaic inverters, battery charging, energy storage, motor drives, UPS, auxiliary power supplies, and SMPS. Source: INFINEON https://www.infineon.com/cms/en/product/power/mosfet/silicon-carbide/
Electrical Engineer, Project management, Agile Methodologies
1 年Yes, I know the Infineon CoolSiC as I was working at Yole analysing this competing product with SEMIKRON's product portfolio. Thank you Max Soriano for remind me the CoolSic from Infineon Technologies
Electrical Engineer, Project management, Agile Methodologies
1 年Silicon carbide technology for automotive applications.