Battery Management, Isolation, GaN Design, Nuclear Energy, Electric Vehicles, Simulation Tools and more!
Maurizio Di Paolo Emilio
Content Editor & Technical Writer | Ph.D in Physics | Power Electronics, Wide Bandgap, Renewable Energy, Embedded Systems, Quantum Computing
In the ever-evolving world of portable devices, one constant demand is for smaller, more efficient and more powerful solutions. A crucial aspect of achieving this is optimizing battery management circuits, and this is where Alpha & Omega Semiconductor (AOS’s) groundbreaking MRigidCSP (Molded Rigid Chip Scale Package) technology comes into play.
AOS’s MRigidCSP technology is tailored for battery management applications. This innovative technology aims to reduce on-resistance while enhancing mechanical strength. AOS is initially offering MRigidCSP with its AOCR33105E, a 12-V common-drain dual N-channel MOSFET. The AOCR33105E has a compact size of 2.08 × 1.45 mm, ultra-low on-resistance (as low as 3 mΩ at VGS = 4.5 V) and robust ESD protection rated at HBM Class 2 (2 kV). Its unique common-drain configuration, where two MOSFETs share a common drain, is especially valuable for battery management applications, offering a space-efficient solution ideal for the slender PCBs commonly found in portable electronic devices.
In an interview with Peter Wilson, senior director of AOS’s MOSFET product line, he said that AOS’s MRigidCSP technology is an innovative approach for bidirectional MOSFETs used in lithium-ion battery management, especially in mobile devices like smartphones, tablets and ultra-thin notebooks. Unlike traditional wafer-level chip-scale packaging (WLCSP), where the die serves as the package and relies on a thick substrate for mechanical strength, MRigidCSP separates mechanical and electrical considerations.
Can Nuclear Energy Help Meet Climate Change Goals?
By Sonu Daryanani
The Intergovernmental Panel on Climate Change (IPCC) has a goal of reaching net-zero CO2 emissions globally by 2050 to limit warming to 1.5°C over pre-industrial levels. This requires global greenhouse gas emissions to be reduced by 43% by 2030 from the peak expected in the early 2020s. A webinar held by the Samuel Lawrence Foundation on June 21 attempted to answer the question of whether nuclear energy generation could be part of the solution to tackling this very serious and urgent problem.
xEV battery safety: a fully integrated solution for HV contactor driver
By Nicolò Cascone
Global carbon dioxide (CO2) reduction is unquestionably the most significant global challenge of this century. The goal of achieving carbon neutrality by 2050 and limiting the long-term increase in global average temperature to 1.5°C has remained unchanged since the signing of the historic Paris Agreement in 2015.
Achieving this lofty objective requires the energy sector to prioritize renewable energy over fossil fuels.
QSPICE: The Various Types of Power Sources (Part 4)
By Giovanni Di Maria
This article will continue to explore the various types of power sources and how they can be used in circuit analysis with QSPICE.
MEMS Hydrogen Sensor Detects BMS Thermal Runaway
By Stefano Lovati
Battery management systems (BMS) ensure that batteries are charged and discharged safely and efficiently. As such, BMS is a significant part of any electric vehicle (EV) that relies on lithium-ion (Li-ion) batteries today. One of the most significant challenges of adopting lithium-ion technology is thermal runaway. When a battery experiences thermal runaway, it can lead to thermal management issues, damage to the battery, and even causing a fire or an explosion.
Guide to Spice Simulation for Circuit Analysis and Design – Part 6: In-depth DC Sweep Analysis
By Giovanni Di Maria
领英推荐
In this part of the article on DC sweep analysis, we delve into some basic concepts that improve the possibilities of analysis and enable the implementation of automatic measurement procedures that would otherwise require much additional work if done manually.
How to Apply an Isolated Power Module in Signal Isolation
By Vince Wen
Signal transmissions are everywhere. In industrial applications, such as electric vehicle (EV) charging stations and automation systems with programmable logic controllers (PLCs), there is a high voltage (up to several kV) that can be dangerous to the human body. This type of hazardous voltage can also pass through the signal line, which can cause signal interference and could eventually destroy the terminal electronic devices.
Moving signals and power across an isolation barrier is a method that can help overcome these challenges. This article will provide an overview regarding signal isolation of a serial peripheral interface (SPI), as well as RS-232, RS-485, and CAN interfaces. It will also explain how isolated power modules can be used for signal isolation by using the MIE1W0505BGLVH, an easy-to-use and ultra-small power module solution, as an example.
GaN on Si power technology: its scope and potential
By Saumitra Jagdale
Gallium Nitride (GaN) has demonstrated tremendous potential over silicon(si) in the field of semiconductor technology for a wide range of high-power applications in recent years. When compared to silicon-based semiconductor devices, Gallium Nitride has a higher breakdown strength and thermal conductivity. Moreover, it is a physically hard and stable Wide Bandgap (WBG) semiconductor with fast switching speeds and higher electrical conductivity.
EPC’s new 48V/12V LLC converter achieves a power density of 5130 W/in^3
By Maurizio Di Paolo Emilio
Efficient Power Conversion Corporation (EPC) announces the availability of the EPC9159, a 48 V / 12 V, LLC converter designed for 48 V server power and DC-DC converters with a high-power density. This reference design has a power density of 5130 W/in^3 and a small footprint of 17.5 mm x 22.8 mm. This is accomplished by employing gallium nitride (GaN) power switches in both the primary and secondary circuits that operate at high switching frequencies.
Bourns Adds 10 New Models to its SiC Schottky Barrier Diode Product Family
By Maurizio Di Paolo Emilio
Bourns has announced that it has added ten new variants to its existing Silicon Carbide (SiC) Schottky Barrier Diode (SBD) product family, which operates at voltages of 650 and 1,200 volts. The Bourns? SiC SBD product range has been expanded to include ten additional models, all of which are designed to meet the ever-increasing demands placed on power density by the most recent transportation, renewable energy, and industrial applications.
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