3.3 kV SiC MOSFET and Schottky Barrier Diode (SBD).

Microchip introduces industry-leading 3.3 kV silicon carbide (SiC) power devices, bringing new levels of efficiency and reliability. 3.3 kV SiC MOSFETs and Schottky barrier diodes (SBDs) expand designers' options for high-voltage power electronics in transportation, energy, and industrial systems.

System designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives, and energy infrastructure solutions need high-voltage switching technology to improve efficiency, reduce system size and weight, and enhance reliability Microchip expands its SiC portfolio by announcing the industry's lowest on-resistance [RDS(on)] 3.3 kV SiC MOSFET and the market's highest current-rated SiC SBD, enabling designers to take advantage of ruggedness, reliability and performance.

Feature

Microchip's 3.3 kV MOSFETs and SBDs join the company's comprehensive portfolio of SiC solutions, which includes 700V, 1200V and 1700V chips, discretes, modules and digital gate drivers. Microchip's 3.3 kV SiC power devices include MOSFETs with the industry's lowest RDS(on) of 25 mOhm and SBDs with the industry's highest current rating of 90 amps. Both MOSFETs and SBDs are available in die or packaged form. These new performance levels enable designers to simplify their designs, create higher power systems, and use fewer paralleled components for smaller, lighter and more efficient power solutions.

Application

Electrified transportation, renewable energy, aerospace and industrial applications.