(110) Silicon Wafers for GaN Epitaxy Growth

UniversityWafer.com provides (110) oriented silicon wafers ranging from 25.4mm-150mm in diameter.

Researchers are turning to (110) oriented wafers as (100) are to difficult to grow GaN on them. Currently, researchers grow GaN-on-Si wafers on Si(111) substrates. But Si(111) have poor electrical characteristics. Researchers are turning to Si(110) substrates which has better atomic arrangement with AlN seed layer as well as an advantage of excellent hole mobility characteristics over Si(001).

UniversityWafer.com Si(110) wafers range from 50 microns thin to over 1mm thick.

With various resistivity. Our (110) wafers can either be single or double side polished.

Visit https://www.universitywafer.com for more info or email us directly for an immediate quote.