OSI Optoelectronics的动态

We are excited to unveil our latest white paper, “Position Sensitive Detector Response Time,” which explores the intricate dynamics of lateral photovoltaic effect detectors. Our research reveals that the response of these detectors is influenced more by the junction type, operational mode, semiconductor properties, and illumination. Dive into our findings and discover the future of photovoltaic technology with us!

New in Elsevier Materials Today, we investigate the deformation leads to a reduction in the energy level associated with electron-accepting properties, thereby enhancing the tribo-negative behavior. These findings would provide the potential to revolutionize material development methodologies by harnessing the relationship between material deformation and triboelectric behavior, paving ways to improve technologies across various fields such as triboelectric energy harvesting, self-powered sensors, and anti-static clothing. Congratulations to our team members! Donghyeon Kang, Joon-Ha Hwang, Young-Jun Kim, Pin Zhao, Hyeon Yeong Lee, Jihye Kim, Min Seok Shin, Sera Jeon, SeongMin Kim. Read this paper: https://lnkd.in/gX4JdaTP?

Call for Papers – 'Nanomaterial-enabled Gas Sensing Microsystems' has emerged as a promising area of research, leveraging the unique properties of nanomaterials to develop highly sensitive and selective gas sensors. Read more here: https://bit.ly/4ea8iPQ. #CallForPapers #Nanomaterial #GasSensors

?? Highly Cited Paper Spotlight! ?? A Review on the Progress of Optoelectronic Devices Based on TiO? Thin Films and Nanomaterials??????? By Shunhao Ge et al. This review explores the advancements in #optoelectronic devices based on TiO? thin films and #nanomaterials, detailing their unique photoelectric performances and applications in areas like sensors, #photodetectors, LEDs, and more. It discusses the characteristics and improvements of TiO? nanostructures, including their role in biosensors and photovoltaic devices, with an emphasis on enhancing device performance and stability. Access the full paper at:?mdpi.com/2210074

???? Exciting news! We've just published our latest paper : "Optimizing liquid-processed carbon nanotube photodetectors on various substrates". Our study showcases the potential of Multi-Wall Carbon Nanotubes (MWCNTs) for optoelectronic applications, demonstrating their efficiency as photo-collectors. We present two hybrid Si-MWCNTs photodetectors on n-silicon substrates coated with Si3N4 or SiO2 dielectrics, highlighting the very good performance of MWCNTs/Si3N4 devices with a peak Equivalent Quantum Efficiency (EQE) of 57% under UV illumination. Our investigation of the impact of MWCNTs on the dielectric characteristics of both substrates offers insights for future applications. Read the full paper here to learn more about our findings and the potential of MWCNTs in optoelectronics and sensors: ?? https://lnkd.in/ddvr4SkR #nanotechnology #CNTs #optoelectronics #sensors

Each conference I attend enriches my knowledge. I have been presenting in the IRPS venue for the third consecutive years. At IRPS 2024 in Dallas, Texas, I particularly understood the importance of timing and perspective in presenting even very simple concepts. During this year's conference, I presented our research on an odometer concept by solely observing the characteristics of I/O pad. Just like a car's odometer tracks mileage, an IC can have its own "odometer" to indicate if it's recycled and its usage history. Traditionally, detecting recycled ICs necessitates on-chip sensors integrated pre-silicon. However, our proposal suggests you may utilize the readily accessible I/O pad transistors for this purpose. Can you say if a room (core) has been previously used just by observing the door (I/Os)? The concept is straightforward, and our initial investigation yielded promising results. In fact, our findings have immediately attracted the interest of conference attendees. We have engaged in discussions with two industrial groups regarding the implementation of the technique in their applications. IEEE International Reliability Physics Symposium (IRPS)

Explore the new book: GaN Technologies - Materials, Manufacturing, Devices and Design for Power Conversion This chapter discusses the capabilities of GaN devices that have been specifically designed for critical applications in high reliability or commercial satellite space environments. Failure mechanisms in GaN, and how they impact radiation performance, will be explored. https://hubs.li/Q02JKlGJ0

NanoLund and Lund Nano Lab have leading roles in the European Chips Act. Many in Europe have been eagerly awaiting the results of the first calls in the European Chips Act for pilot lines, with the aim to enhance existing and develop new advanced pilot lines across the Union to enable development and deployment of cutting-edge semiconductor technologies and next-generation semiconductor technologies. Also, we in NanoLund have our stake in the call, and have together with Swedish partners at Link?pings universitet, Chalmers tekniska h?gskola and Kungliga Tekniska h?gskolan been invited to be part of a pilot line for Wide Bandgap materials. We were very happy when the Chips Joint Undertaking (JU) announced that the Public Authorities Board approved all four pilot line proposals. Lund University and Vanya Darakchieva will lead the Workpackage on III- N radiofrequency and power device technologies of the Wide Bandgap pilot line. “It is a great honour to be internationally recognized for our leading role in research on wide-bandgap materials for power electronics. We are happy and eager to work together with European partners and industries for establishing a resilient wide band gap semiconductors ecosystem” says Vanya Darakchieva. The III-Nitride activities are focussed on the developments of state-of-the-art epitaxy, radiofrequency and power HEMTs and FinFETS. The target applications for power devices include smart grid, electric train traction, wind turbines, power components for propulsion and charging of electric vehicles. Through the industrial collaboration within the Centre for III-nitride technology (C3NiT), a Vinnova Competence Centre also led by Vanya Darakchieva, the pathway to innovation where these technologies lead to an actual benefit in society is facilitated. It will also be an important development of Lund Nano Lab. Vanya Darakchieva Niklas Rorsman Nerijus Armakavicius Peter Modh #semiconductors #ChipsAct #nanotechnology #Myfab #powerelectronics Lunds universitet ? Lunds tekniska h?gskola

2nd day at #APEC - Seminar "High-Power GaN Devices and Applications" by Davide Bisi. Nice and detailed explanation about different GaN technologies. Key takeaway: GaN could be interesting for solide state switches in future due to high electron mobility. - Discussion with Slobodan Cuk about topologies vs. devices. What comes first? - Daniel Friedrichs, Ph.D. presented in his planary presentation impressive requirements for power electronics to connect literally to patients. - David Perrault showed challenges and results of the design of a 10s of MHz 1kW converter. - Balu Balakrishnan talked about sustainability and why they focused on GaN, even without telling their customers about it. - Alexandra [AJ] Kantor and @Matthew Thompson explained the challenges to provide GA (giga amps!) and MW for fusion reactors. - Francesco Carobolante pointed out the extreme situation on a chip and a PCB to fulfill power and signal integrity for AI applications with 1kA. - Nice discussions with Keysight Technologies about chip modeling and Transphorm Inc. and EPC about GaN devices - Visit the microMouse Contest

I am excited to share my recent work published in Sensors and Actuators A: Physical, where we present a novel approach to nanokelvin-resolution thermometry using photonic crystals. Our proposed sensors, composed of GaAs/AlAs and GaN/AlN structures, offer significant advancements in achieving extreme temperature resolution with a microscale footprint. Key Insights: - A novel 1D photonic crystal band edge thermometer for achieving high-temperature sensitivity with a microscale footprint. - Thermoreflectance coefficients up to 60.6 K?1 and 1.1 μs thermal time constant, with sensor thicknesses of just 6.7 μm. - Projected thermometry noise floors of 84 nK·Hz?? for GaAs/AlAs sensors and 35 nK·Hz?? for GaN/AlN sensors. This work could have microcalorimetry, bolometry, and microscale thermal monitoring applications. Check out the full paper here: https://lnkd.in/eRmFCNhP I am especially grateful?for the guidance of my advisor, Dr. Amin Reihani. If you're interested in high-resolution thermometry, I'd love to hear your thoughts! #Research #Sensors #Thermometry #Microelectronics #SensorsAndActuators #Photonics #NanokelvinResolution