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IEEE Solid-State Circuits Letters (SSC-L): A sub-terahertz (sub-THz) phase-locked loop (PLL) with ultra-low jitter performance and low power consumption, crucial for next-generation 6G mobile transceivers using high-order modulation schemes in high-frequency sub-THz bands. This PLL, fabricated using a 65-nm CMOS process, occupies a small silicon area and achieves a remarkable root mean square (RMS) jitter of 47 femtoseconds while consuming only 26.6 mW. Key innovations include a separate proportional path and a reset switch to extend the loop bandwidth and reduce phase noise. https://bit.ly/3OiDAZF

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What is Schottky Diode? A Schottky diode is a semiconductor device that allows current to flow in one direction with very low forward voltage drop and fast switching speeds. It is formed by the junction of a metal and a semiconductor, typically silicon. This structure gives it a lower forward voltage drop (around 0.2 to 0.4 volts) compared to regular silicon diodes (about 0.7 volts), making it efficient for applications like power rectification and RF applications. Schottky diodes are also known for their low reverse recovery time, which helps reduce losses in high-frequency circuits.

Thermally Robust Photorelays for Semiconductor Testers Requiring just a 1.6V operating voltage, the TLP3412SRLA photorelay from Toshiba Electronics Europe GmbH is highly optimised for use in semiconductor test systems - which are now typical controlled by 1.8V programmable logic hardware. This 1-Form-A (NO) contact type unit has 500Vrms isolation capabilities. The elevated operational temperature capabilities supported (reaching 125°C) mean that it is well aligned with the need for the device under test (DUT) to have high temperatures applied to it - thereby ensuring adequate temperature margin within the equipment. The compactness of this optoelectronics component (with its 1.45mm × 2.0mm × 1.4mm form factor) is another valuable attribute. This allows the demands for densely packed probe cards to be addressed. Its on-state current... READ MORE https://lnkd.in/eZDYMfAw Michelle Shrimpton Natalia Selezneva Birgit Schoeniger Armin Derpmanns Ian Wilson Axel Klein

Electronics Component Series The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices. A MOSFET is either a core or integrated circuit where it is designed and fabricated in a single chip because the device is available in very small sizes. The introduction of the MOSFET device has brought a change in the domain of switching in electronics. Let us go with a detailed explanation of this concept.

Solid-State Circuits Magazine (SSC-M): The risk posed by electrostatic discharge (ESD) to the yield and reliability of semiconductor devices was acknowledged as early as 1970. This article provides an overview of the historical advancements in ESD protection and explores the future trajectory amid continuous integration. https://bit.ly/3Shoe99

Have you seen the new PFC w/ 650V GaN HEMT Power Stage IC design with ROHM Semiconductor Americas??

POWR-SPEED High-Speed Fuses | Littelfuse ? Littelfuse POWR-SPEED High-Speed Fuses are tailored for performance and efficiency to better safeguard important power semiconductors against short circuits. These fuses are specifically designed to have the short-circuit properties necessary for protecting semiconductor devices, such as low energy let-through (l2t), low peak currents (IPEAK), low-arc voltage and high heat dissipation. Learn More>>https://lnkd.in/grHcd8u3

Taiwan Semiconductor announced a family of 650V #siliconcarbide Schottky barrier diodes which are suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these #SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall solution size.