Qromis, Inc.

A RECAP: Check out the extended ~9 min educational content on how Qromis, Inc., a Silicon Valley based company, unlocks the full potential of #GaN #power and other GaN electronics through a myriad of distinct features of its patented #QST engineered substrate technology (~200 issued worldwide patents): 1)        A groundbreaking CTE-matching innovation between GaN epitaxy and CMOS fab-friendly, SEMI-spec QST substrate over a wide temperature range, enabling manufacturing of scalable GaN electronics on 200mm and 300mm platforms. 2)        Sustainability and reduced carbon-footprint of the QST substrate manufacturing by utilizing conventional energy efficient semiconductor process tools and materials in traditional CMOS fabs, which is similar to Silicon-on-Insulator (#SOI) substrates with respect to manufacturing processing and cost, with an over 98% yield and a process cycle time of less than 7 days. 3)        Economies of scale advantages for device manufacturers and foundries by production of all GaN devices (power, RF, more) on the same CMOS manufacturing platform. 4)        High mechanical strength of QST substrate (3x higher flexural strength than Si), along with CTE-matching, resulting in robust wafer shape control and crack-free GaN epitaxy layers / epitaxy wafers. 5)        High epitaxy yield and reduction of epitaxy cost by ~50% by eliminating complex strain management layers. 6)        Device reliability and ruggedness with extensive epitaxy thickness budget. 7)        Freedom of controlling GaN epitaxy crystal quality from GaN-on-GaN type to GaN-on-Si type for specific device applications. 8)        Interchangeable GaN growth interfaces: from single crystal Si(111) to single crystal SiC, GaN, sapphire and more: with only a fraction of micron-thick cost effective layer transfer technology from these donor substrates (over 10 times or more from the same donor) for portfolio of low cost and high performance structures addressing variety of device applications. 9)        Cooler devices enabled by the high thermal conductivity polycrystalline AlN core material. 10)  Enabling full spectrum of GaN power devices from lateral to vertical architectures, extending from 100V to 2,000V and beyond, including wafer-level monolithic ICs with superior device isolation / no back-gating effect arising from the highly insulating polycrystalline AlN core material. 11)  High yielding device wafers with 5mm edge exclusion and low R&D cost enabling fast entry into GaN device business for IDMs and foundries. 12)  SHOWCASE: Vanguard International Semiconductor Corporation (VIS) became the 1st foundry offering 200mm GaN power device services on CMOS fab-friendly QST platform with a remarkable speed and low R&D spending. 13)  SHOWCASE: Shin-Etsu Chemical (QROMIS’ licensee) has announced 300mm QST substrates in addition to its commercially available 200mm and 150mm QST substrates for device manufacturers. Inquiries: info@qromis.com, sales@qromis.com

---- > Record subscriptions: more than 13,800! Thank you for being part of our growing community! Your support and contributions make this newsletter possible. As we approach the end of the year, I want to wish you a Merry Christmas and a Happy New Year! Wishing you all a wonderful Christmas filled with joy, love, peace, and special moments shared with your loved ones. May 2025 be a year of great achievements and exciting personal and professional successes. #2025 #2024 Please note that there will be no newsletters for the next two editions as I take a short break for the holidays. The next issue will be on January 9. Curiosity and Resilience, Advances for 2025, GaN Technology, Battery, SiC Acquisition, Renewable Energy and more! #powerelectronics Infineon Technologies EPC - Efficient Power Conversion Qromis, Inc. Navitas Semiconductor QPT Rob Gwynne André Bonnardot EasyGaN Gene Berdichevsky Sila Nanotechnologies, Inc. onsemi Qorvo, Inc. Sergio Fissore Texas Instruments @Robert Taylor Giordana Francesca Brescia Aalyia Shaukat Wolfspeed X-FAB Diodes Incorporated EVE Energy Co.,Ltd. NXP Semiconductors Ascend Elements SLAC National Accelerator Laboratory #semiconductor #technology

As we enter into a new Holiday Season, we would like to take a moment and express our sincere gratitude for your business and partnership with Qromis, Inc.   What an incredible year it’s been for #GaN, revolutionizing power electronics at a much faster speed than predicted!   Here at QROMIS, we remain fully dedicated to providing even greater value to your GaN businesses in 2025 and beyond with our revolutionary engineered #QST substrate products for 200mm and 300mm diameter high volume manufacturing platforms.   We wish you, your business, your team, and your loved ones a Merry Christmas, and a magnificent new year filled with health, happiness, continued success and prosperity.   Power to you all!   Power to GaN!

Amazing substrate technology.

Great article about advantages of GaN on QST platform for HEMT devices.

Advancement of semiconductor technology depends on the epitaxial growth of #GaN films, especially in high-frequency and power devices. But because of mismatched characteristics between substrates and #epitaxial layers—such as lattice constant and thermal expansion coefficient mismatches—ability to grow high quality and scalable GaN epitaxial layers on non-native substrates, such as #silicon (Si) and sapphire, suffer great difficulties and prevent unlocking the full potential of GaN. Using SEMI-spec and CMOS fab-friendly QST engineered substrates, which very closely match to the CTE of GaN over a wide temperature range, Vanguard International Semiconductor Company (VIS) solves these problems and allows the deposition of crack-free, high quality and easily scalable high-performance GaN epitaxial layers on 200 mm platform. In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing their investment in GaN technology and its broader implications for the semiconductor sector. #galliumnitride #technology #powerelectronics #industry #widebandgap Qromis, Inc.

📊 Market & Technology – Power GaN 2024   Power GaN devices are transforming the #powerelectronics industry, driving tenfold market growth from 2019 to 2023, with the market expected to surpass $2 billion and a 41% CAGR from 2023 to 2029.  In consumer electronics, power #GaN is rapidly becoming the preferred technology for fast chargers, especially as power levels reach 300W. It appeals to newcomers due to quick market entry and high-volume potential, as seen with @Qromis' QST substrate in a Lakesemi charger. Power GaN is also advancing in OVP units, home appliances, automotive #LiDAR systems for #ADAS, and sub-11kW onboard chargers. It’s penetrating high-end e-bikes, e-scooters, and #datacenters with 3kW+ GaN power supplies.   👉 Discover the power GaN market trends, forecast, supply chain insights and much more in our report: https://lnkd.in/eVpRyF2C   ✍ Taha Ayari, PhD ; Hassan CHEAITO

Catch this insightful session October 9 at our #PowerUP virtual conference! ⚡️ Tune in to hear experts Cem Basceri of Qromis, Inc., Gayn Erickson of Aehr Test Systems, Thomas Never of Infineon Technologies and Victor Veliadis of PowerAmerica, moderated by Maurizio Di Paolo Emilio of Power Electronics News, detail #SiC and #GaN technologies. ➡️ Register now: http://arw.li/6043lM913

Catch this insightful session October 9 at our #PowerUP virtual conference! ⚡️ Tune in to hear experts Cem Basceri of Qromis, Inc., Gayn Erickson of Aehr Test Systems, Thomas Never of Infineon Technologies and Victor Veliadis of PowerAmerica, moderated by Maurizio Di Paolo Emilio of Power Electronics News, detail #SiC and #GaN technologies. ➡️ Register now: http://arw.li/6042lMgf0

Qromis, Inc., a Silicon Valley based company, unlocks the full potential of #GaN through a myriad of distinct features of its patented #QST engineered substrate technology. Of those, check the attached animation on two important aspects of this groundbreaking technology: 1) MANUFACTURING of QST substrates in traditional CMOS fabs using conventional semiconductor materials and processes which is similar to Silicon-on-Insulator (SOI) substrates with respect to manufacturing processing and cost. 2) SUSTAINABILITY and REDUCED CARBON FOOTPRINT of the QST substrate manufacturing by utilizing energy efficient mainstream semiconductor process tools in CMOS fabs with an over 98% yield and a process cycle time of less than 7 days. These are critical components of the QST innovation which was carefully designed per the projected cost and sustainability / net-zero requirements in the industry which separate this disruptive technology from the manufacturing of native GaN substrates or non-native Si, Sapphire or SiC substrates. Further details will be presented at #PowerUP & #Fortronic Conference & Expo on September 18 & 19, LIVE in Milan, Italy: -  Our President & CEO Cem Basceri Basceri and other industry experts in EXECUTIVE PANEL SESSION on September 18 (16:30 – 18:00) will dive into exploring advancements and addressing challenges in GaN and SiC Technologies, moderated by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News. -  Our CTO Vladimir Odnoblyudov Odnoblyudov will present on September 19 (14:30 – 14:55) how Qromis’ groundbreaking SEMI standard QST engineered substrate technology is taking GaN adoption to the next level by large diameter (200 mm and 300 mm), scalable (100 V to 2000 V and beyond) and CMOS fab-friendly GaN-on-QST manufacturing platform for GaN power devices, as well as GaN RF and optoelectronic devices. #power #powerelectronics #RF #optoelectronics #semiconductor #widebandgap #WBG #galliumnitride #engineeredsubstrate #CMOS #silicononinsulator #SOI #sustainability #carbonfootprint #netzero #semistandard #semispec #silicon #Si #sapphire #SiC #powerelectronicsnews