NEO Semiconductor

NEO Semiconductor's 3D X-AI Awarded Best of Show for Most Innovative Artificial Intelligence (AI) Application at #FMS2024. 3D X-AI chip technology is targeted to replace the existing HBM chips and solve data bus bottlenecks. We are honored and thankful to accept this prestigious award, and applaud the entire NEO Semiconductor team for the hard work and dedication it has taken to make this ground-breaking technology a reality.

Andy Hsu, Founder & CEO of NEO Semiconductor was an absolute rockstar on the keynote stage at #FMS2024, introducing NEO Semiconductor’s 3D X-AI, a game-changing 3D memory with AI processing that combines data storage and data processing in a single chip, accelerating neural performance by 100X and reducing power consumption by 99%. Visit us at booth #507 to learn more.

We are so excited to officially open #FMS2024. Come visit NEO Semiconductor's stunning booth #507 and learn about our innovative technologies for 3D NAND flash memory and 3D DRAM. Looking forward to an amazing show here in Santa Clara Convention Center, CA.

NEO Semiconductor is proud to announce its 3D X-AI Chip. AI Chips with NEO’s 3D X-AI technology can achieve 100X performance acceleration, 99% power reduction and 8X memory density. Meet us at #FMS2024: The Future of Memory and Storage, booth #507. Andy Hsu will deliver a keynote presentation: “New 3D AI Chip Technology Accelerates Generative AI”, on August 6 @ 11:45 a.m. Pacific Time. See you in Santa Clara Convention Center! https://lnkd.in/dcjKyp_9

Read this interesting article from Chris Mellor on NEO Semiconductor. We are all excited and in final preparations for #FMS2024, and we can't wait to disclose more next week. Meet with us in Santa Clara Convention Center, Booth #507. https://lnkd.in/dE3rJ8Se

AI is going to be a hot new topic at FMS this year. Andy Hsu, will introduce NEO Semiconductor's 3D X-AI, a game-changing 3D memory with AI processing that combines data storage and data processing in a single chip, accelerating neural performance by 100X and reducing power consumption by 99%. Meet NEO Semiconductor at #FMS2024, booth #507.

We are so excited and looking forward to our participation at #FMS2024. Stay tuned for NEO Semiconductor's 3D X-AI innovation?- 3D memory with AI processing. https://lnkd.in/dZS7-mbj

Thank you IEEE International Memory Workshop for inviting Andy Hsu, Founder & CEO of NEO Semiconductor to present our 3D X-DRAM, A Novel 3D NAND-like DRAM Cell & TCAD Simulations. We found the event insightful and we look forward to next year!

Andy Hsu, Founder & CEO of NEO Semiconductor is now in Seoul attending IEEE IMW 2024, where he revealed a performance boosting Floating Body Cell mechanism for 3D X-DRAM. Did you know that the traditional 2D Floating Body Cell uses body effect resulting in short data retention and small sensing window? NEO’s 3D X-DRAM Floating Body Cell BCM mechanism uses back-gate voltage to change channel depth, which increases data retention by 40,000X and sensing window by 20X.?For more information read our press release. https://lnkd.in/dkHzPt65

Meet Andy Hsu, Founder & CEO of NEO Semiconductor at the upcoming 2024 IEEE International Memory Workshop, May 12-15, 2024 - Seoul, Republic of Korea. The conference will bring the memory community together in a workshop environment to discuss the memory process and design technologies, applications, market needs and strategies. See you in Seoul!