NEO Semiconductor

Exciting developments are happening in the world of In-Memory Compute (IMC)! While IMC has faced challenges in achieving commercial success, new approaches, including those from NEO Semiconductor, are pushing the boundaries of what’s possible. In the latest article from Semiconductor Engineering, Andy Hsu, CEO at NEO Semiconductor, shares insights into how our innovative 3D DRAM technology is advancing IMC. By performing significant computation directly within the DRAM array, we aim to reduce data movement and enhance efficiency for AI and other high-performance applications. A big thank you to Semiconductor Engineering for highlighting these advancements! Read the full article here: https://lnkd.in/erRiMFmw #IMC #AI #Innovation #3DDRAM #MemoryInnovation

As the semiconductor industry evolves, the shift toward 3D DRAM marks a groundbreaking moment. While 3D NAND has achieved remarkable density through layer stacking, DRAM has faced unique challenges—until now. NEO Semiconductor is proud to be at the forefront of this transformation with our innovative 3D floating-body cell technology. By overcoming previous limitations of floating-body designs, we’re paving the way for DRAM architectures that rival NAND in density and efficiency. Our dual-gate solution boosts data retention and sensing margins, offering a scalable and energy-efficient path forward for memory-intensive applications like AI and data centers. Our proof-of-concept wafers are set for 2025, and we’re excited to help redefine what’s possible in DRAM. Stay tuned as we continue to push the boundaries of innovation! A big thank you to Semiconductor Engineering for spotlighting this critical progress in their insightful article: 'Baby Steps Toward 3D DRAM'. Check it out here: https://lnkd.in/gvV_-c68 #MemoryInnovation #3DDRAM #SemiconductorTech

NEO Semiconductor's 3D X-AI Awarded Best of Show for Most Innovative Artificial Intelligence (AI) Application at #FMS2024. 3D X-AI chip technology is targeted to replace the existing HBM chips and solve data bus bottlenecks. We are honored and thankful to accept this prestigious award, and applaud the entire NEO Semiconductor team for the hard work and dedication it has taken to make this ground-breaking technology a reality.

Andy Hsu, Founder & CEO of NEO Semiconductor was an absolute rockstar on the keynote stage at #FMS2024, introducing NEO Semiconductor’s 3D X-AI, a game-changing 3D memory with AI processing that combines data storage and data processing in a single chip, accelerating neural performance by 100X and reducing power consumption by 99%. Visit us at booth #507 to learn more.

We are so excited to officially open #FMS2024. Come visit NEO Semiconductor's stunning booth #507 and learn about our innovative technologies for 3D NAND flash memory and 3D DRAM. Looking forward to an amazing show here in Santa Clara Convention Center, CA.

NEO Semiconductor is proud to announce its 3D X-AI Chip. AI Chips with NEO’s 3D X-AI technology can achieve 100X performance acceleration, 99% power reduction and 8X memory density. Meet us at #FMS2024: The Future of Memory and Storage, booth #507. Andy Hsu will deliver a keynote presentation: “New 3D AI Chip Technology Accelerates Generative AI”, on August 6 @ 11:45 a.m. Pacific Time. See you in Santa Clara Convention Center! https://lnkd.in/dcjKyp_9

Read this interesting article from Chris Mellor on NEO Semiconductor. We are all excited and in final preparations for #FMS2024, and we can't wait to disclose more next week. Meet with us in Santa Clara Convention Center, Booth #507. https://lnkd.in/dE3rJ8Se

AI is going to be a hot new topic at FMS this year. Andy Hsu, will introduce NEO Semiconductor's 3D X-AI, a game-changing 3D memory with AI processing that combines data storage and data processing in a single chip, accelerating neural performance by 100X and reducing power consumption by 99%. Meet NEO Semiconductor at #FMS2024, booth #507.

We are so excited and looking forward to our participation at #FMS2024. Stay tuned for NEO Semiconductor's 3D X-AI innovation?- 3D memory with AI processing. https://lnkd.in/dZS7-mbj

Thank you IEEE International Memory Workshop for inviting Andy Hsu, Founder & CEO of NEO Semiconductor to present our 3D X-DRAM, A Novel 3D NAND-like DRAM Cell & TCAD Simulations. We found the event insightful and we look forward to next year!