Testing CMOS devices for RISEs can be done in a variety of ways, depending on the level of abstraction, the type of radiation, and the availability of resources. Simulation is a popular method that involves using software tools to model the behavior of CMOS devices under radiation exposure. This can help estimate the probability and severity of RISEs, as well as explore different design options and mitigation strategies. However, simulation may not capture all physical effects and variations of radiation, and require high computational power and accuracy. Accelerated testing is another approach that involves exposing devices to high doses of radiation in a controlled environment. This can help validate simulation results and obtain realistic data on RISEs. Yet, it can be costly, time-consuming, and limited by the availability of radiation sources. Lastly, field testing uses natural sources of radiation to expose devices to low doses in a realistic environment. This can evaluate the actual impact and occurrence of RISEs in real-world scenarios, and assess long-term reliability and robustness. However, field testing may be challenging, unpredictable, and influenced by many external factors.